Abstract
Highly oriented diamond film was grown on a (100) Si substrate by a bias-enhanced microwave-plasma chemical vapor deposition. The Si surface was carburized at a faster rate by bias treatment than by carburization alone, but the initial carburization stage was indispensable. During the bias treatment, the flat surface was changed to a textured structure on the nanometer scale. The formation of this structure was required for the synthesis of a highly oriented diamond film. Diamond microcrystals formed subsequently were irregular and of a few to a few tens nanometers in size. They then grew to oriented film in the following growth process.
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References
A. T. Collins and E. C. Lightowlers, The Properties of Diamond, edited by J. E. Field (Academic, London, 1979), p. 79.
A. T. Collins, Semicond. Sci. Techol. 55, 505 (1989).
S. Yugo, T. Kanai, T. Kimura, and T. Muto, Appl. Phys. Lett. 58, 1036 (1991).
B. R. Stoner and J. T. Glass, Appl. Phys. Lett. 60, 698 (1992).
B. R. Stoner, G. H. Ma, S. D. Wolter, W. Zhu, Y-C. Wang, R. F. Davis, and J. T. Glass, Diamond Relat. Mater. 2, 142 (1993).
D. N. Belton and S. J. Schmieg, J. Appl. Phys. 66, 4223 (1989).
C. H. Carter, Jr., R. F. Davis, and S. R. Nutt, J. Mater. Res. 1, 811 (1986).
R. Kohl, C. Wild, N. Herres, P. Koidl, B. R. Stoner, and J. T. Glass, Appl. Phys. Lett. 63, 1792 (1993).
S. D. Wolter, B. R. Stoner, J. T. Glass, P. J. Ellis, D. S. Buhaenko, C. E. Jenkins, and P. Southworth, Appl. Phys. Lett. 62, 1215 (1993).
B. R. Stoner, C-t. Kao, D. M. Malta, and R. C. Glass, Appl. Phys. Lett. 62, 2347 (1993).
X. Jiang and C. P. Klages, Diamond Relat. Mater. 2, 1112 (1993).
X. Jiang, C. P. Klages, R. Zachai, M. Hartweg, and H. J. Fusser, Appl. Phys. Lett. 62, 3438 (1993).
S. Yugo, T. Kimura, and T. Kanai, Diamond Relat. Mater. 2, 328 (1993).
B. R. Stoner, G-H. M. Ma, S. D. Wolter, and J. T. Glass, Phys. Rev. B 45, 11067 (1992).
B. W. Sheldon, Y. Shigesato, R. E. Boekenhauer, and J. Rankin, in Proceedings of the First International Conference on the Applications of Diamond Films and Related Materials, edited by Y. Tzeng, M. Yoshikawa, M. Muranaka, and A. Feldman (Elsevier, New York, 1991), p. 229.
B. W. Sheldon, R. Csencsits, J. Rankin, R. E. Boekenhauer, and Y. Shigesato, J. Appl. Phys. 75, 5001 (1994).
H. Maeda, T. Hino, M. Irie, K. Kusakabe, and S. Morooka, unpublished.
K. Koizumi, T. Murakami, and T. Inuzuka, Appl. Phys. Lett. 57, 563 (1990).
H. Maeda, S. Masuda, K. Kusakabe, and S. Morooka, Diamond Relat. Mater. 3, 398 (1994).
X. Jiang, K. Schiffmann, A. Westphal, and C. P. Klages, Appl. Phys. Lett. 63, 1203 (1993).
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Maeda, H., Irie, M., Hino, T. et al. Formation of highly oriented diamond film on carburized (100) Si substrate. Journal of Materials Research 10, 158–164 (1995). https://doi.org/10.1557/JMR.1995.0158
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DOI: https://doi.org/10.1557/JMR.1995.0158