Abstract
Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.
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Porter, L.M., Davis, R.F., Bow, J.S. et al. Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001). Journal of Materials Research 10, 26–33 (1995). https://doi.org/10.1557/JMR.1995.0026
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DOI: https://doi.org/10.1557/JMR.1995.0026