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TEM study of the structure and chemistry of a diamond/silicon interface

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Abstract

The interface between diamond and silicon, fabricated by growing diamond films on (001) silicon by microwave plasma assisted chemical vapor deposition (MPACVD), was characterized by high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Two types of interface morphology were identified. Type A interfaces contain an amorphous transition layer composed of silicon, carbon, and oxygen; the diamond overgrowth on this layer consists of nanocrystalline grains with random orientations. Type B interfaces consist of large diamond grains having special orientations with respect to the silicon substrate, without an obvious presence of a glassy phase and with a much lower oxygen content than type A interfaces.

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Author notes

  1. J. Bruley

    Present address: Department of Materials Science and Engineering, Lehigh University, Pennsylvania, Whitaker Laboratory #5, 18015-3195, Bethlehem, USA

Authors and Affiliations

  1. Department of Materials Science and Engineering, Cornell University, New York, 14853-1501, Ithaca, USA

    Y. Tzou & R. Raj

  2. Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestraβe 92, 70174, Stuttgart, Germany

    J. Bruley, F. Ernst & M. Rühle

Authors
  1. Y. Tzou
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  2. J. Bruley
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  3. F. Ernst
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  4. M. Rühle
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  5. R. Raj
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Tzou, Y., Bruley, J., Ernst, F. et al. TEM study of the structure and chemistry of a diamond/silicon interface. Journal of Materials Research 9, 1566–1572 (1994). https://doi.org/10.1557/JMR.1994.1566

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  • DOI: https://doi.org/10.1557/JMR.1994.1566

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