Abstract
The effects of annealing on B2O3-contained ZnO varistors with particular emphasis on the degradation behavior, nonlinear coefficient, trap density, donor density, and Schottky energy barrier were investigated. The thermal stability of ZnO varistors was considerably improved by the thermal annealing process.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. Inada, Jpn. J. Appl. Phys. 17 (1), 1–10 (1978).
K. Eda, A. Iga, and M. Matsuoka, J. Appl. Phys. 51 (5), 2678–2684 (1980).
H. R. Philip and L. M. Levinson, Am. Ceram. Soc. Bull. 7, 1–21 (1983).
T. K. Gupta, W. G. Carlson, and P. L. Hower, J. Appl. Phys. 52 (6), 4104–4111 (1981).
T.K. Gupta, J. Am. Ceram. Soc. 73 (7), 1817–1840 (1990).
K. Gupta, W. G. Carlson, and B. O. Hall, in Grain Boundaries in Semiconductors, edited by J. H. Leamy, G. E. Pike, and C. H. Seager (Elsevier, New York, 1982), pp. 399–404.
D. D. Kim, M. H. Oh, and C. H. Kim, J. Mater. Sci. 21 (10), 3491 (1986).
T.K. Gupta and W.G. Carlson, J. Mater. Sci. 20, 3487–3500 (1985).
S. Chen, Master Thesis, National Cheng Kung University, Republic of China (1990).
K. Eda, Jpn. J. Appl. Phys. 49 (5), 2964–2972 (1978).
Heinz and K. Henisch, Semiconductor Contacts-An Approach To Ideas and Models, Chap. 4 (Clarendon Press, Oxford, 1984).
R. M. Hill, Philos. Mag. 23, 59 (1971).
A. Iga, M. Matsuoka, and M. Masuyama, Jpn. J. Appl. Phys. 15 (6), 1161 (1976).
A. Iga, M. Matsuoka, and M. Masuyama, Jpn. J. Appl. Phys. 15 (6), 1847 (1976).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Huang, JL., Li, KB. The effects of heat treatment on B2O3-contained ZnO varistor. Journal of Materials Research 9, 1526–1532 (1994). https://doi.org/10.1557/JMR.1994.1526
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1994.1526