Abstract
The effect of the SnO2 doping on the structure and the electrical performance of ZnO varistors with high voltage was systematically studied. When the doping amount of SnO2 was small, the main effect was to promote the growth of grains. As the doping amount increased, SnO2 led to the formation of the Zn2SnO4 spinel, inhibiting the growth of ZnO grains. The donor concentration, the boundary barrier and the surface state density decreased first and then increased, respectively. By proper SnO2 doping, the key performance parameters of the high voltage varistors were improved, where the breakdown voltage gradient was increased from 193.0 to 208.5 V \( \cdot \) mm−1, the voltage ratio was reduced from 1.74 to 1.73, and the 2 ms square waveform impulse energy withstanding capacity was increased from 200 to 250 A.
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We acknowledge the fund support of Science and Technology Project of State Grid Hunan Electric Power Company (grant 5216AF210004).
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Wang, B., Fu, Z., Kong, A. (2023). Effect of SnO2 Doping on the Performance of High Voltage ZnO Varistors. In: Yang, H., Fei, J., Qiang, T. (eds) Smart Grid and Innovative Frontiers in Telecommunications. SmartGIFT 2022. Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, vol 483. Springer, Cham. https://doi.org/10.1007/978-3-031-31733-0_15
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