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Effect of surface structures upon ultrathin film interference fringes

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Abstract

Effect of surface structures upon ultrathin film interference fringes generated from extremely thin films or epitaxial layers grown on semiconductor wafers has been studied. Since dark regions of fringes correspond to the places where the thin films are destroyed or absent, the fringes are investigated to detect uneven surfaces with undesired structures. Therefore, surface microstructures can be detected and characterized effectively by the modification of the fringes.

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References

  1. L. Taijing, K. Toyoda, L. Lian, N. Nango, and T. Ogawa, J. Mater. Res. 7, 2182 (1992).

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  2. T. Ogawa, L. Taijing, and K. Toyoda, Jpn. J. Appl. Phys. 30 (8A), 1497 (1991).

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Authors and Affiliations

  1. Department of Physics, National University of Singapore, Singapore, 0511, Kent Ridge, Singapore

    Lu Taijing

  2. Department of Physics, Gakushuin University, Tokyo, Mejiro 1-5-1, 171, Toshima-ku, Japan

    Tomoya Ogawa

  3. Laser Science Research Group, Institute of Physical and Chemical Research (RIKEN), Saitama, 351-01, Wako, Japan

    Koichi Toyoda

  4. Institute of Semiconductors, Academia Sinica, Box 912, 100083, Beijing, China

    Zhenguo Wang

Authors
  1. Lu Taijing
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  2. Tomoya Ogawa
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  3. Koichi Toyoda
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  4. Zhenguo Wang
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Taijing, L., Ogawa, T., Toyoda, K. et al. Effect of surface structures upon ultrathin film interference fringes. Journal of Materials Research 8, 2315–2318 (1993). https://doi.org/10.1557/JMR.1993.2315

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  • DOI: https://doi.org/10.1557/JMR.1993.2315

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