Abstract
The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature (∊820 °C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as 〈111〉diamond parallel to 〈0001〉graphite and 〈110〉diamond parallel to 〈11$\overline 1$0〉graphite. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.
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M.W. Geis, N.N. Efremow, and D.D. Rathman, J. Vac. Sci. Technol. A6, 1953 (1988).
H. Nakazawa, Y. Nakazawa, M. Kamo, and K. Osumi, Thin Solid Films 151, 199 (1987).
J. E. Field, in The Properties of Diamond, edited by J. E. Field (Academic Press, New York, 1979), p. 281.
D.N. Belton and S.J. Schmieg, J. Appl. Phys. 66, 4223 (1989).
B.C. Banarjee, T.J. Hirth, and P.L. Walker, Jr., Nature 192, 450 (1961).
D. L. Trimm, in Pyrolysis: Theory and Industrial Practice, edited by L. F. Albright, B. L. Crynes, and W. H. Corcoran (Academic Press, New York, 1983), p. 203.
S. Koizumi, T. Murakami, T. Inuzuka, and K. Suzuki, Appl. Phys. Lett. 57, 563 (1990).
R. Richter, J. R. Smith, and J. G. Gay, in The Structure of Surfaces, edited by M. A. van Hove and S. Y. Tong (Springer-Verlag, New York, 1985), p. 35.
P. W. Palmberg, in The Structure and Chemistry of Solid Surfaces, edited by G. A. Somorjai (Wiley, New York, 1969), p. 29.1.
A.E. Karu and M. Beer, J. Appl. Phys. 37, 2179 (1966).
F.J. Derbyshire, A.E.B. Presland, and D.L. Trimm, Carbon 13, 111 (1975).
A.E.B. Presland and P.L. Walker, Jr., Carbon 7, 1 (1969).
S.M. Irving and P.L. Walker, Jr., Carbon 5, 399 (1967).
A. Oya and S. Otani, Carbon 17, 131 (1979).
M.B. Bever and C.F. Floe, Trans. AIME 166, 128 (1946).
S.T. Lee, S. Chen, G. Braunstein, X. Feng, I. Bello, and W.M. Lau, Appl. Phys. Lett. 59, 785 (1991)
J. F. Prins and H. L. Gaigher, Proc. 2nd Int. Conf. on New Diamond Science and Technology, edited by, R. Messier, J. T. Glass, J. E. Butler, and R. Roy (Materials Research Society, Pittsburgh, PA, 1991), p. 561.
J. B. Nelson and D. P. Riley, Proc. Phys. Soc. 57, 477 (1945).
G. R. Hennig, J. Chem. Phys. 40, 2877 (1964).
J. M. Thomas, in Chemistry and Physics of Carbon, edited by P.L. Walker, Jr. (Dekker, New York, 1965), Vol. 1, p. 121, and references therein.
E. L. Evans, R.J. M. Griffiths, and J.M. Thomas, Science 171, 174 (1971).
D. R. Olander, R. Jones, J. A. Schwarz, and W. Siekhaus, J. Chem. Phys. 57, 421 (1972).
A. Tomita and Y. Tamai, J. Chem. Phys. 78, 2254 (1974).
R.T. Yang and C. Wong, J. Chem. Phys. 75, 4471 (1981).
D. W. McKee, in Chemistry and Physics of Carbon, edited by P. L. Walker, Jr. and P. A. Thrower (Dekker, New York, 1981), Vol. 16, p. 1, and references therein.
R. O. Grisdale, J. Appl. Phys. 24, 1082 (1953).
M. Balooch and D. R. Olander, J. Chem. Phys. 63, 4772 (1975).
F. S. Feates, Carbon 6, 949 (1968).
G. J. Vandentop, M. Kawasaki, R. M. Nix, I. G. Brown, M. Salmeron, and G.A. Somorjai, Phys. Rev. B 41, 3200 (1990).
L. E. Kline, W. D. Partlow, and W. E. Bies, J. Appl. Phys. 65, 70 (1989).
H. Toyoda, H. Kojima, and H. Sugai, Appl. Phys. Lett. 54, 1507 (1989).
G. J. Vandentop, P. A. P. Nascente, M. Kawasaki, D. F. Ogletree, G. A. Somorjai, and M. Salmeron, J. Vac. Sci. Technol. A9, 2273 (1991).
C. W. Zielke and E. Gorin, Ind. Eng. Chem. 47, 820 (1955).
C. A. Coulson, Proc. of the 4th Conf. on Carbon (Pergamon Press, New York, 1960), p. 215.
E.J. Wheeler and D. Lewis, Mater. Res. Bull. X, 687 (1975).
W. Zhu, C.A. Randall, A.R. Badzian, and R. Messier, J. Vac. Sci. Technol. A7, 2315 (1989).
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Ong, T.P., Xiong, F., Chang, R.P.H. et al. Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces. Journal of Materials Research 7, 2429–2439 (1992). https://doi.org/10.1557/JMR.1992.2429
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DOI: https://doi.org/10.1557/JMR.1992.2429