Abstract
Titanium disulfide films were prepared by plasma CVD. Crystalline orientation of layered TiS2 was investigated in relation to deposition rate, film thickness, and kinds of substrate. The preferred orientation of TiS2 basal plane perpendicular to substrates was obtained on the films with their thickness of more than ca. 10 μm at the deposition rate of ca. 4 ⊠ 10−3 g/cm2·h on all kinds of substrate. This orientation resulted in a large discharge capacity in a lithium battery cathode application.
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Kikkawa, S., Miyazaki, M. & Koizumi, M. Titanium disulfide thin film prepared by plasma CVDa). Journal of Materials Research 5, 2894–2901 (1990). https://doi.org/10.1557/JMR.1990.2894
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DOI: https://doi.org/10.1557/JMR.1990.2894