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Oxidation of diamond films synthesized by hot filament assisted chemical vapor deposition

  • Diamond and Diamond-Like Materials
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Abstract

Oxidation of polycrystalline diamond films on (111) Si wafers in air at temperatures up to 1073 K was investigated by thermogravimetry. The diamond films before and after partial oxidation were characterized by optical and scanning electron microscopy, x-ray, infrared, and Raman spectroscopy. The oxidation of synthetic diamond films started at a lower temperature than that for natural diamond. The rates of oxidation of the diamond films synthesized by the hot filament and the microwave plasma methods were intermediate between the rates of oxidation of the 111 and 100 planes of natural diamond crystals. The apparent activation energy for the oxidation of the synthetic diamond films agreed well with that for the oxidation of natural diamond via diamond to graphite transition at low oxygen pressures.

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Author notes

  1. M. Alam

    Present address: New Mexico Institute of Mining and Technology, Socorro, New Mexico, USA

Authors and Affiliations

  1. Materials Research Laboratory, The Pennsylvania State University, 16802, University Park, Pennsylvania, USA

    K. Tankala, T. DebRoy & M. Alam

Authors
  1. K. Tankala
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  2. T. DebRoy
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  3. M. Alam
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Tankala, K., DebRoy, T. & Alam, M. Oxidation of diamond films synthesized by hot filament assisted chemical vapor deposition. Journal of Materials Research 5, 2483–2489 (1990). https://doi.org/10.1557/JMR.1990.2483

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  • DOI: https://doi.org/10.1557/JMR.1990.2483

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