Abstract
The finding of Jang and Koch that the melting enthalpy/mass, ΔHm, of a Sn matrix containing a fine dispersion of Ge particles sharply decreases with increasing Ge volume fraction, νGe, >0.5 and vanishes at νGe = ν°Ge ≍ 0.81, is accounted for by supposing that the Sn is distributed between an interfacial and bulk state. The interfacial statc is one in which the Sn is assumed to be in a disordered, possibly amorphous, structure coating the Ge particles uniformly to a constant thickness, δ. The remaining “bulk” Sn is assumed to exhibit the normal enthalpy of fusion, ΔH°m. The model accounts for the dependence of ΔHm on νGe within the experimental uncertainty. With the average width of Ge particles −10 nm, δ is estimated to be −0.23 nm; i.e., of the order of the thickness of one Sn monolayer.
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References
C. C. Koch, J. S. C. Jang, and S. S. Gross, J. Mater. Res. 4, 557 (1989).
J. S. C. Jang and C. C. Koch, J. Mater. Res. 5, 325 (1990).
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Turnbull, D., Jang, J.S.C. & Koch, C.C. Model for melting enthalpy of Sn in Ge–Sn composites. Journal of Materials Research 5, 1731–1732 (1990). https://doi.org/10.1557/JMR.1990.1731
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DOI: https://doi.org/10.1557/JMR.1990.1731