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Model for melting enthalpy of Sn in Ge–Sn composites

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Abstract

The finding of Jang and Koch that the melting enthalpy/mass, ΔHm, of a Sn matrix containing a fine dispersion of Ge particles sharply decreases with increasing Ge volume fraction, νGe, >0.5 and vanishes at νGe = ν°Ge ≍ 0.81, is accounted for by supposing that the Sn is distributed between an interfacial and bulk state. The interfacial statc is one in which the Sn is assumed to be in a disordered, possibly amorphous, structure coating the Ge particles uniformly to a constant thickness, δ. The remaining “bulk” Sn is assumed to exhibit the normal enthalpy of fusion, ΔH°m. The model accounts for the dependence of ΔHm on νGe within the experimental uncertainty. With the average width of Ge particles −10 nm, δ is estimated to be −0.23 nm; i.e., of the order of the thickness of one Sn monolayer.

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References

  1. C. C. Koch, J. S. C. Jang, and S. S. Gross, J. Mater. Res. 4, 557 (1989).

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  2. J. S. C. Jang and C. C. Koch, J. Mater. Res. 5, 325 (1990).

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Turnbull, D., Jang, J.S.C. & Koch, C.C. Model for melting enthalpy of Sn in Ge–Sn composites. Journal of Materials Research 5, 1731–1732 (1990). https://doi.org/10.1557/JMR.1990.1731

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  • DOI: https://doi.org/10.1557/JMR.1990.1731

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