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Structural studies of HgCdTe grown by MOCVD on lattice-matched substrates

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Abstract

Improved structural quality Hg1−xCdxTe epitaxial films have been grown by metal organic chemical vapor deposition (MOCVD) using the interdiffused multilayer process (IMP) on lattice-matched CdZnTe substrates at temperatures above 400°C with diethyltelluride. Double-crystal rocking curve data with values as low as 25 arcsec correlated with cross-sectional transmission electron micrographs. The process of growing alternate layers of HgTe/CdTe for improved compositional uniformity, and the inherent mismatch, was not detrimental to the structural quality, which was limited by that of the substrate.

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Authors and Affiliations

  1. Westinghouse Science & Technology Center, Pennsylvania, 15235, Pittsburgh, USA

    M. J. Bevan, J. Greggi & N. J. Doyle

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  1. M. J. Bevan
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  2. J. Greggi
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  3. N. J. Doyle
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Bevan, M.J., Greggi, J. & Doyle, N.J. Structural studies of HgCdTe grown by MOCVD on lattice-matched substrates. Journal of Materials Research 5, 1475–1479 (1990). https://doi.org/10.1557/JMR.1990.1475

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  • DOI: https://doi.org/10.1557/JMR.1990.1475

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