Abstract
The internal gettering of nickel in (100) silicon wafers implanted with 2.5 ⊠ 1015 argon-ions/cm2 at 280 keV has been studied by electron microscopy. Nickel deposited on the back surface is gettered by forming a discontinuous layer of nickel silicide, NiSi2, in the argon-implanted region near the front surface. Electron microdiffraction and high-resolution electron microscopy indicate that the layers of nickel silicide probably grow epitaxially on the undamaged silicon surrounding the silicide.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. M. Sze, VLSI Technology (McGraw-Hill Book Company, New York, 1983); T. Y. Tan and W. K. Tice, Phil. Mag. 34 (4), 615 (1976).
S. K. Ghandhi, VLSI Fabrication Principles (John Wiley & Sons, New York, 1983).
H. H. Woodbury and G. W. Ludwig, Phys. Rev. 117, 102 (1960).
E. R. Weber, Appl. Phys. A 30, 1 (1983).
A. Ourmazd and W. Schroter (Proc. Mater. Res. Soc. Symp.) (Materials Research Society, Pittsburgh, PA, 1985), Vol. 36, p. 25.
D. M. Vanderwalker, Phys. Stat. Sol. (a) 86, 507 (1984).
T. M. Buck, J. M. Poate, and K. A. Pickar, Surf. Sci. 33, 362 (1973).
P. K. Sinha and W. S. Glaunsinger, Semiconductor Fabrication: Technology and Metrology (ASTM, Philadelphia, PA, 1989), p. 339.
W. S. Johnson and J. F. Gibbsons, Projected Range Statistics in Semiconductors (1970).
S. L. Shinde and L. C. De Jonghe, J. Electron Microscopy Tech. 3, 361 (1986).
J. M. Poate and R. T. Tung, Layered Structures and Interface Kinetics: Their Technology and Applications (KTK Scientific Publisher, Japan, 1985), p. 149.
S. H. Chen, L. R. Zheng, C. B. Carter, and J. W. Mayer, J. Appl. Phys. 57 (2), 258 (1985).
K. C. Chiu, J. M. Poate, J. E. Rowe, T. T. Sheng, and A. G. Cullis, Appl. Phys. Lett. 38 (12), 988 (1981).
F. Comin, J. E. Rowe, and P. H. Citrin, Phys. Rev. Lett. 51 (26), 2402 (1983).
M. Hansen, Metallurgy and Metallurgical Engineering Series (McGraw-Hill Book Co., New York, 1959).
H. Bender, Phys. Stat. Sol. (a) 86, 245 (1984).
A. Bourret, Proc. of the 13th Int. Conf. on Defects in Semiconductors (Electronic Materials Committee of the Metallurgical Society of AIME, California, 1983).
D. M. Maher, A. Staudinger, and J. R. Patel, J. Appl. Phys. 47 (9), 3813 (1976).
P. K. Sinha, Dissertation (Arizona State University, 1988).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sinha, P.K., Glaunsinger, W.S. Electron microscopic studies of internal gettering of nickel in silicon. Journal of Materials Research 5, 1013–1016 (1990). https://doi.org/10.1557/JMR.1990.1013
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1990.1013