The Effect of the Formation of Silicides on the Resistivity of Silicon

Abstract

The effect of the formation of thin films of nickel silicides on the migration of intrinsic p-type impurities in silicon was studied for the first time. It was found that bulk resistance ${{\rho }_{{v}}}$ of a single Si crystal increases by a factor of 3–4 if  a NiSi₂ film with thickness θ ≥ 50–100 Å forms on its surface. This is attributable to the migration of boron atoms toward the silicide film. The Si layer thickness enabling measurable boron migration was estimated at 800–1000 Å.