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Effect of residual stress and adhesion on the hardness of copper films deposited on silicon

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Abstract

Continuous indentation testing was used to measure the hardness as a function of indentation depth, of three micron thick copper films deposited on silicon with an intermediate layer of 20 nm thick chromium or titanium. Three different indenters, a nearly perfect Vickers, a Vickers with a 1.2 μm2 flat, and a Pyramid with a 25 μm2 flat were employed. The hardness data suggest that the titanium interlayer produced significantly greater film/substrate adhesion than the chromium interlayer. A compressive residual stress, which relaxed with time, was detected in the samples with the titanium interlayer.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Cornell University, Ithaca, 14853, New York, USA

    W. R. LaFontaine, B. Yost & Che-Yu Li

Authors
  1. W. R. LaFontaine
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  2. B. Yost
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  3. Che-Yu Li
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LaFontaine, W.R., Yost, B. & Li, CY. Effect of residual stress and adhesion on the hardness of copper films deposited on silicon. Journal of Materials Research 5, 776–783 (1990). https://doi.org/10.1557/JMR.1990.0776

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  • DOI: https://doi.org/10.1557/JMR.1990.0776

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