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Solid-phase epitaxy of Ti-implanted LiNbO3

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Abstract

The solid-phase epitaxy of LiNbO3 following ion implantation of Ti dopant for the purpose of producing optical waveguides has been studied. Implanting 360-keV Ti at liquid nitrogen temperature produces a highly damaged region extending to a depth of about 400 nm. This essentially amorphous region can be recrystallized epitaxially by annealing in a water-saturated oxygen atmosphere at temperatures near 400 °C. though complete removal of all irradiation-induced damage requires temperatures in excess of 600 °C. The activation energy of the regrowth is 2.0 eV for implanted fluences below 3 ⊠ 1016 Ti/cm2. At higher fluences the regrowth proceeds more slowly, and Ti dopant segregates at the regrowth interface. Complete recrystallization following high-dose implantation requires annealing temperatures in excess of 800 °C.

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Authors and Affiliations

  1. Solid State Division, Oak Ridge National Laboratory, Tennessee, 37831, Oak Ridge, USA

    D. B. Poker & D. K. Thomas

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  1. D. B. Poker
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  2. D. K. Thomas
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Poker, D.B., Thomas, D.K. Solid-phase epitaxy of Ti-implanted LiNbO3. Journal of Materials Research 4, 412–416 (1989). https://doi.org/10.1557/JMR.1989.0412

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  • DOI: https://doi.org/10.1557/JMR.1989.0412

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