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Atomic transport in Xe-irradiated Ni/SiO2 bilayers

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Abstract

Parametric experiments are described that characterize the process of atomic relocation in Ni/SiO2 bilayers induced by Xe irradiation. The parameters varied are the irradiation temperature (− 196 to + 500 °C) and the Xe irradiation dose (0.01−15 × 1015cm−2). Backscattering spectrometry of the irradiated samples after removal of the unreacted Ni film is the main analytical tool. A phenomenological model is given that describes the results quantitatively. It is deduced that secondary recoil implantation followed by subsequent redistribution within the cascade’s lifetime produces the dominant transport mechanism responsible for incorporating Ni into the SiO2.

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Authors and Affiliations

  1. Bellcore, Morristown, 07960, New Jersey, USA

    T. Banwell

  2. California Institute of Technology, Pasadena, 91125, California, USA

    M-A. Nicolet

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  1. T. Banwell
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  2. M-A. Nicolet
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Banwell, T., Nicolet, MA. Atomic transport in Xe-irradiated Ni/SiO2 bilayers. Journal of Materials Research 3, 1072–1081 (1988). https://doi.org/10.1557/JMR.1988.1072

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  • DOI: https://doi.org/10.1557/JMR.1988.1072

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