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Precision measurements of the effect of implanted boron on silicon solid phase epitaxial regrowth

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Abstract

The epitaxial recrystallization rates of self-ion amorphitized layers in silicon wafers with 〈100〉 substrate orientation were measured by in situ, high precision, isothermal cw laser interferometry. With this one-sample technique the changes produced by implanted boron impurity concentrations (N B) in the activation energy E a and preexponential V 0 of solid phase epitaxy were measured for concentrations in the range 5 × 1018 cm−3 < N B < 3 × 1020 cm−3 and for temperatures from 450 to 550°C. The differential changes in E a produced were measured to within ± 23 meV when systematic errors were eliminated. Changes in activation energy and entropy [E a and log (V 0)] were found to be linearly correlated for all concentrations. This observation is consistent with the idea that electronically active impurities alter regrowth velocities by reducing the critical temperature for disordering at some of the interfacial sites at which elementary reconstructive processes are driven by thermal fluctuations. For small N n, the critical temperature of the impurity-modified reconstruction is estimated at 1200K, approximately 200 K below the melting temperature of amorphous silicon. The E a decreased exponentially with N B to a concentration N infl, larger than the estimated equilibrium solubility limit, where there was an inflection point in the V vs N B curve. The E a increased for values of N B larger than N infl, showing that the differential increase in V for higher concentrations was due to a differential increase in the activation entropy. A change in the correlation between E a and log (V 0) at N infl indicated that larger N B produced an additional reduction of the critical temperature of the reconstruction. For small N B, the data support a simple Fermi level shifting model for the “electronic effect” of impurities on SPE (solid phase epitaxial) regrowth.

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Authors and Affiliations

  1. Electrical and Computer Engineering Department, University of Texas, 143 Engineering Science Building, Austin, Texas, 78712, USA

    Won Woo Park

  2. Electrical and Computer Engineering Department and Materials Science and Engineering, University of Texas, 143 Engineering Science Building, Austin, Texas, 78712, USA

    M. F. Becker & R. M. Walser (J. H. Herring Centennial Professor in Engineering.)

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  1. Won Woo Park
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  2. M. F. Becker
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  3. R. M. Walser
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Park, W.W., Becker, M.F. & Walser, R.M. Precision measurements of the effect of implanted boron on silicon solid phase epitaxial regrowth. Journal of Materials Research 3, 298–308 (1988). https://doi.org/10.1557/JMR.1988.0298

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  • DOI: https://doi.org/10.1557/JMR.1988.0298

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