Abstract
Ion implantation and ion beam mixing have been investigated as alternative techniques to hightemperature diffusion for introducing dopants into LiNbO3. Heavy ion bombardment at both 77 and 300 K initiated a near-surface decomposition causing Li to diffuse to the surface where it formed a nonuniform agglomerate. The damage and annealing characteristics of this effect were studied by ion scattering/channeling, secondary ion mass spectrometry, and optical microscopy. The origins of the surface decomposition are discussed along with possible solutions, and selected samples were evaluated for waveguide properties.
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References
R. V. Schmidt and I. P. Kaminow, Appl. Phys. Lett. 25, 458 (1984).
H. Naitoh, M. Nunoshita, and T. Nakayama, Appl. Opt. 16, 2546 (1977).
T. R. Ranganath and S. Wang, Appl. Phys. Lett. 30, 376 (1977).
A. Yi-Yan, I. Andonovic, E. Y. B. Pun, and B. Bjortorp, Appl. Phys. Lett. 43, 19 (1983).
P. S. Cross, R. A. Baumgartner, and B. H. Kolner, Appl. Phys. Lett. 44, 486 (1984).
D. Yap, L. M. Johnson, and G. W. Pratt, Appl. Phys. Lett. 44, 583 (1984).
C. Canali, A. Camera, G. Celotti, G. Delia Mea, and P. Mozzolli, in Defect Properties and Processing of High-Technology Nonmetallic Materials, edited by J. H. Crawford, Jr., Y. Chen, and W. A. Sibley (North-Holland, New York, 1984), Mat. Res. Soc. Symp. Proa, Vol. 24, p. 459.
I. P. Kaminow and J. R. Carruthers, Appl. Phys. Lett. 22, 326 (1973).
V. E. Wood, J. Appl. Phys. 52, 1118 (1981).
J. Nuda, M. Fukuma, and Y. Ito, J. Appl. Phys. 51, 1379 (1980).
J. J. Jackel, C. E. Rice, and J. S. Veselka, Appl. Phys. Lett. 41, 607 (1982).
K. K. Wong, R. M. DeLaRue, and S. Wright, Opt. Lett. 7, 546 (1983).
M. De Micheli, J. Botineau, S. Neven, P. Sibillot, D. B. Ostrowsky, and M. Papuichon, Opt. Lett. 9, 116 (1983).
R. A. Becker, Appl. Phys. Lett. 43, 131 (1983).
R. G. Wilson, D. M. Jamba, and D. A. Betts, in Ref. 7, p. 181.
H. Karge, G. Gotz, U. Jahn, and S. Schmidt, Nucl. Instrum. Methods 182/183, 777 (1981).
G. L. Destefanis, P. D. Townsend, and J. P. Gailliard, Appl. Phys. Lett. 32, 293 (1983).
G. L. Destefanis, J. P. Gilliard, E. P. Ligeon, S. Valette, B. W. Farmery, P. D. Townsend, and A. Perez, J. Appl. Phys. 50, 7898 (1979).
D. T. Y. Wei, W. W. Lee, and L. R. Bloom, Appl. Phys. Lett. 25, 329 (1974).
J. Heibel and E. Voges, IEEE J. Quant. Electron. QE-18, 820 (1982) (Topical meeting on Integrated and Guided-Wave Optics, Incline Village, NV, January 1980).
K. Wenzlik, J. Heibei, and E. Voges, Phys. Stat. Sol. 61, K207 (1980).
T. R. Larson, W. H. Wiesenberger, and W. H. Lucke, Appl. Phys. Lett. 22, 617 (1973).
P. D. Townsend, J. Phys. E 10, 197 (1977).
P. Hartemann, Rev. Phys. Appl. 12, 843 (1977).
P. Hartemann and M. Morizot, in Ion Implantation in Semiconductors, edited by F. Chernow, J. A. Borders, and D. K. Brice (Plenum, New York, 1977), p. 257.
G. Gotz and H. Karge, Nucl. Instrum. Methods 209/210, 1079 (1983).
M. Kawabe, M. Kubota, K. Masuda, and S. Namba, J. Vac. Sci. Technol. 15, 1096 (1978).
P. Hartemann, Appl. Phys. Lett. 27, 263 (1975).
G. L. Destefanis, J. P. Gailliard, and P. D. Townsend, Radiat. Effects 48, 63 (1980).
A. Faik, P. G. Dawber, D. J. O’Connor, and P. D. Townsend, Radiat. Effects 64, 235 (1982).
R. Valatka, S. Ioneliunas, and L. Pranevicius, Akust. Zh. 26, 804 (1980).
J. P. Kurmer and C. L. Tang, Appl. Phys. Lett. 42, 146 (1983).
Y. Qui, J. E. Griffith, and T. A. Tombrello, Radiat. Effects 64, 111 (1982).
P. Hartemann, P. Couvard, and D. Desbois, Appl. Phys. Lett. 32, 266 (1978).
P. D. Townsend and S. Valette, in Treatise on Materials Science and Technology, edited by J. K. Hirvoven (Academic, New York, 1980), Vol. 18, p. 446.
P. D. Townsend, Nucl. Instrum. Methods 182/183, 727 (1981).
W. Primak, J. Appl. Phys. 43, 4927 (1972).
S. Jetschke, H. Karge, and K. Hehl, Phys. Stat. Sol. A 77, 207 (1983).
S. Jetschke and K. Hehl, Phys. Stat. Sol. A 88, 193 (1985).
J. Jackel, A. M. Glass, G. E. Peterson, C. E. Rise, D. H. Olson, and J. J. Veselka, J. Appl. Phys. 55, 269 (1984).
K. L. Sweeney and L. E. Halliburton, Appl. Phys. Lett. 43, 336 (1983).
Y. Ohmachi and J. Noda, Appl. Phys. Lett. 27, 544 (1975).
I. P. Kaninow and J. R. Carruthers, Appl. Phys. Lett. 22, 326 (1973).
G. Battaglin, G. Delia Mea, G. De Marchi, P. Mazzoldi, and O. Puglisis, Radiat. Effects 64, 99 (1982) and references therein.
R. Pareja, R. Gonzalez, and Y. Chen, J. Appl. Phys. 56, 660 (1984).
J. L. Jackel, Opt. Commun. 3, 82 (1982).
J. L. Jackel, V. Ramaswamy, and S. P. Lyman, Appl. Phys. Lett. 38, 509 (1981).
Y. Ohmachi and J. Noda, Appl. Phys. Lett. 27, 544 (1975).
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Appleton, B.R., Beardsley, G.M., Farlow, G.C. et al. Ion beam processing of LiNbO3. Journal of Materials Research 1, 104–113 (1986). https://doi.org/10.1557/JMR.1986.0104
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DOI: https://doi.org/10.1557/JMR.1986.0104