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InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine

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Abstract

Lattice-matched InGaAs/lnP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) as the group V sources. The results of X-ray diffraction on InGaAs/lnP single herterostructure show that there is a compressive-strained interfacial layer at the InP-to-InGaAs interface. X-ray diffraction of InGaAs/ InP superlattices is successfully simulated by using the same interfacial layer. TBAs purging of InP surface has a significant influence on the interfacial strain. A novel gas switching sequence, which switches group III to the run line earlier than TBAs, is proposed to reduce this interfacial strain. As a result, the average compressive strain of superlattices decreases, and a blue shift of photoluminescence ( PL) peak energy and narrowing in PL width are obtained.

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Authors and Affiliations

  1. State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, China

    Xiangang Xu, Deliang Cui, Zhe Tang & Xiaopeng Hao

  2. Institut für Halbleitertechnik, RWTH Aachen, Germany

    Heime K.

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  1. Xiangang Xu
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  2. Deliang Cui
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  3. Zhe Tang
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  4. Xiaopeng Hao
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  5. Heime K.
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Correspondence to Xiangang Xu.

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Xu, X., Cui, D., Tang, Z. et al. InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine. Sci. China Ser. A-Math. 45, 655–660 (2002). https://doi.org/10.1360/02ys9071

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