Abstract
NEA-GaAs based photocathodes allow the production of spin-polarized electron beams for fundamental research. We demonstrate how semiconductor properties influence salient parameters such as polarization and beam brightness. We present techniques that provide remedies for the extreme sensitivity to environmental factors. These are discussed for the specific installation that has provided spin-polarized beam at the MAMI facility during the last decade.
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Aulenbacher, K. Polarized beams for electron accelerators. Eur. Phys. J. Spec. Top. 198, 361–380 (2011). https://doi.org/10.1140/epjst/e2011-01499-6
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DOI: https://doi.org/10.1140/epjst/e2011-01499-6