Abstract
Silicon carbide nanosheets (SiCNRs) have a broad application prospect in the new generation of micro/nanophotonic devices. Based on the previous study of layered SiCNSs (FL-SiCNSs), the first-principles calculation of non-layered SiCNSs (NL-SiCNSs) is carried out in this paper. According to the lattice structure and its evolution, the interlayer coupling mechanism of NL-SiCNSs is revealed. The lattice structure, band-gap, and optical properties of NL-SiCNSs and FL-SiCNSs with different thicknesses (molecular layers) are studied, and the effect of the interlayer coupling mechanism on the optical properties of SiCNSs is analyzed systematically. Results show that non-layered SiCNSs show strong reflection in the vertical direction, indicating that they can be used in UV reflectors. This research can provide a theoretical basis for the application of two-dimensional silicon carbide materials in electronics, optics, and other fields.
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This manuscript has associated data in a data repository. [Authors’ comment: All data generated or analyzed during this study are included in this published article, and its supplementary information files].
References
J.P. Crocombette, G. Dumazer, N.Q. Hoang, F. Gao, W.J. Weber, J. Appl. Phys. 101, 023527 (2007)
Y.T. Yang, K.L. Ekinci, X.M.H. Huang, L.M. Schiavone, M.L. Roukes, C.A. Zorman, M. Mehregany, Appl. Phys. Lett. 78, 162–164 (2001)
H. Matsunami, Microelectron. Eng. 83, 2–4 (2006)
C.R. Eddy, D.K. Gaskill Jr., Science 324, 1398 (2009)
Y.J. Li, S.L. Li, P. Gong, Y.L. Li, X.Y. Fang, Y.H. Jia, M.S. Cao, Physica B 539, 72–77 (2018)
Y. Kayanuma, Phys. Rev. B 38, 9797 (1988)
R. Maboudian, C. Carraro, D.G. Senesky, C.S. Roper, Vac. Sci. Technol. A 31, 050805 (2013)
X.L. Feng, M.H. Matheny, C.A. Zorman, M. Mehregany, M.L. Roukes, Nano Lett. 10, 2891–2896 (2010)
M. Awais, H. Mousa, K. Teker, J. Mater. Sci. Mater. Electron. 32, 3431 (2021)
X. Zhang, J. Wang, Z. Yang, X. Tang, Y. Yue, Sci. Rep. 10, 11386 (2020)
P. Nematollahi, M.D. Esrafili, RSC Adv. 6, 59091–59099 (2016)
R.S. Singh, A. Solanki, Phys. Lett. A 380, 1201 (2016)
Y.Y. Yang, P. Gong, W.D. Ma, R. Hao, X.Y. Fang, Chin. Phys. B 30, 067803 (2021)
P. Gong, Y.Y. Yang, W.D. Ma, X.Y. Fang, X.L. Jiang, Y.H. Jia, M.S. Cao, Physica E 128, 114578 (2021)
M. Eghbalian, R. Ansari, S. Rouhi, Physica B 610, 412939 (2021)
J.M. Zhang, F.L. Zheng, Y. Zhang, V. Ji, J. Mater. Sci. 45, 3259 (2010)
Y.Z. Li, M.Y. Sun, X.X. Yu, W.K. Liu, S.S. Kong, Y.L. Li, X.Y. Fang, Eur. Phys. J. Plus 137, 995 (2022)
E. Bekaroglu, M. Topsakal, S. Cahangirov, Phys. Rev. B 81, 075433 (2010)
R. Ansari, S. Rouhi, M. Mirnezhad, M. Aryayi, Physica E 53, 22–28 (2013)
L. Sun, B. Wang, Y. Wang, Appl. Surf. Sci. 473, 641–648 (2019)
H.S. Ahin, S. Cahangirov, M. Topsakal, E. Bekaroglu, E. Akturk, R.T. Senger, S. Ciraci, Phys. Rev. B 80, 155453 (2009)
S.S. Lin, J. Phys. Chem. C 116, 3951–3955 (2012)
M. Houmad, O. Dakir, A. Abbassi, A. Benyoussef, A.E. Kenz, H. Ez-Zahraouy, Optik (Stuttg.) 127, 1867 (2016)
N. Delavari, M. Jafari, Solid State Commun. 275, 1–7 (2018)
G.J. Yang, Y.Y. Wu, S.Y. Ma, Y.J. Fu, D.Q. Gao, Z.M. Zhang, J.Y. Li, Superlattices Microstruct. 119, 19–24 (2018)
W.K. Liu, S.S. Kong, X.X. Yu, Y.L. Li, L.Z. Yang, Y. Ma, X.Y. Fang, Materials Today Communications 34, 105030 (2023)
S.S. Kong, W.K. Liu, X.X. Yu, Y.L. Li, L.Z. Yang, Y. Ma, X.Y. Fang, Front. Phys. 18, 43302 (2023)
M.Y. Sun, Y.Z. Li, X.X. Yu, W.K. Liu, S.S. Kong, P. Gong, X.Y. Fang, Eur. Phys. J. B. 95, 142 (2022)
Y.H. Jia, P. Gong, S.L. Li, W.D. Ma, X.Y. Fang, Y.Y. Yang, M.S. Cao, Phys. Lett. A 384, 126106 (2020)
Y. Ma, H. Yan, X. X. Yu, P. Gong, Y. L. Li, W. D. Ma, X. Y. Fang, J. Appl. Phys. 135, (2024). https://doi.org/10.1063/5.0187116
F. Opoku, K.K. Govender, C.G.C.E. van Sittert, P.P. Govender, Appl. Surf. Sci. 427, 487 (2018)
Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, M.S. Strano, Nat. Nanotechnol. 7(11), 699–712 (2012). https://doi.org/10.1038/nnano.2012.193
D.L. Wood, J.S. Tauc, Weak absorption tails in amorphous semiconductors. Phys. Rev. B 5, 3144 (1972)
L. Liu, A. Das, C.M. Megaridis, Terahertz shielding of carbon nanomaterials and their composites. Carbon 69, 1–16 (2014)
G. Fiorentino, W. Syed, A. Syed, A. Neto, P.M. Sarro, Artificial dielectric layer based on PECVD silicon carbide for terahertz sensing applications. Procedia Eng. 87, 1497–1500 (2014)
Y.X. Wang, W.D. Wu, Z.R. Zhao, Recent progress and remaining challenges of 2D material-based terahertz detectors. Infrared Phys. Technol. 102, 103024 (2019)
Acknowledgements
The authors thank the National Natural Science Foundation of China (Grant No. 11574261), the Hebei Province Natural Science Foundation (Grant No. A2021203030), and Innovation Capability Improvement Project of Hebei province (No. 22567605H).
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LZY was responsible for data curation, investigation, methodology, and writing—original draft. WKL and PG were involved in conceptualization, data curation, investigation, and methodology. HY contributed to data curation, formal analysis, and writing—original draft. XXY took part in conceptualization, methodology, and writing—reviewing and editing. YLL assisted with formal analysis, investigation, and methodology. XYF participated in conceptualization, formal analysis, funding acquisition, methodology, validation, and writing—reviewing.
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Yang, LZ., Liu, WK., Yan, H. et al. Structural evolution, interlayer coupling, band-gap, and optical properties of non-layered SiCNSs. Eur. Phys. J. Plus 139, 66 (2024). https://doi.org/10.1140/epjp/s13360-024-04883-z
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DOI: https://doi.org/10.1140/epjp/s13360-024-04883-z