Abstract
In this article, the linear and nonlinear intersubband optical properties of the valence-band electronic states were theoretically investigated in GaAs/GaAsSb/GaAs parabolic quantum well structures. The linear and the third-order nonlinear optical absorption coefficients and refractive index changes were examined as a function of the external electric field, half-width of the well, and the antimony content using density matrix formalism and the scheme of the iterative method in the framework of a two-level system. The numerical findings justified that the linear and the third-order nonlinear optical responses originated from the one-photon resonance processes. The resonance energy spectra indicated a redshift by increasing the dressing parameter of the laser field and a blueshift upon enhancing the electric field and the half-width of the well. The results revealed an enhancement in the amplitude of the optical characteristics with increasing the dressing parameter of the laser field, a decline in the electric field and an increment in the half-width of the well. Both linear and third-order nonlinear optical properties were maintained with variation of the antimony content.
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The current study was partially supported by Ahvaz Branch of Islamic Azad University. The authors would like to thank the Research Council for their generous support of this work.
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Najafi Chaleshtari, Z., Haghighatzadeh, A. & Attarzadeh, A. Investigation of linear and third-order nonlinear optical properties of laser-dressed GaAs/GaAsSb/GaAs parabolic valence-band quantum wells. Eur. Phys. J. Plus 138, 139 (2023). https://doi.org/10.1140/epjp/s13360-023-03756-1
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DOI: https://doi.org/10.1140/epjp/s13360-023-03756-1