Abstract
The results of a comprehensive lattice dynamical study are reported by using a realistic rigid ion model (RIM) for the novel zinc-blende binary (BeX, ZnX) compounds, ternary (BexZn1−xX) alloys and short-period (BeX)n/(ZnX)n superlattices (SLs), with X = Se, Te. In the RIM, we have meticulously included as well as accurately appraised the short-range forces up to second nearest neighbors and long-range Coulomb interactions for all the binary, ternary materials, and superlattice structures. Distinct variations perceived in the simulated phonon frequencies and thermodynamical traits of BeX, ZnX compounds including the ideal BexZn1−xX ternary alloys are attributed to the differences between cation (Be, Zn) and anion (X) masses as well as changes in their bond lengths, bond strength and bond (Be-X, Zn-X) covalency. In the short-period (BeX)n/(ZnX)n (001) SLs (n ≤ 4), the phonons propagating normally and obliquely to the interfaces as well as the anisotropy of zone-center (\(\vec{\user2{q}} = 0\)) modes are carefully examined while identifying the confined optical-, quasi-confined optical and interface phonons. The simulated results of phonon features are compared/contrasted very well with the existing experimental and theoretical data. Controlling the vibrational traits by altering the number of BeX, ZnX monolayers (n, m) in (BeX)n/(ZnX)m SLs can provide excellent opportunities of improving their electrical and thermal properties for engineering various electronic device structures.
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References
II–VI Semiconductor materials and their applications, Edited by M. C. Tamargo (Taylor Francis, 2002); O. Maksimov , S.P. Guo, M. Munoz, M.C. Tamargo, Optical properties of BeCdSe/ZnCdMgSe strained quantum well structures, J. Appl. Phys. 90, 5135 (2001).
S.A.A. Rais, Z. Hassan, A. Shuhaimi, A. Bakar, M.N.A. Rahman, Y. Yusuf, M.I.M. Taib, A.F. Sulaiman, H.N. Hussin, M.F. Ahmad, M.N. Norizan, K. Nagai, Y. Akimoto, D. Shoji, Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes. Opt. Mater. Exp. 11, 926 (2021)
P.J. Parbrook, B. Corbett, J. Han, T.-Y. Seong, H. Amano, Micro-light emitting diode: from chips to applications. Laser Photonics Rev. 15, 2000133 (2021)
T.K. Ng, J. A. H.-Lerma, C. H. Kang, I. Ashry, H. Zhang, G. Bucci and B. S. Ooi, Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications. J. Phys. D: Appl. Phys. 54, 143001 (2021)
C. Weisbuch, Review—on the search for efficient solid state light emitters: past present, future. ECS J Solid-State Sci Technol 9, 016022 (2020)
M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Zak, M. Chlipała, M. Sawicka, K.N. Szkudlarek, A.F. Zmuda, J.S. Koziorowska, S. Stanczyk, C. Skierbiszewski, Vertical integration of nitride laser diodes and light emitting diodes by tunnel junctions. Electronics 9, 1481 (2020)
Y. Zhang, G. Deng, Y. Yu, Y. Wang, D. Zhao, Z. Shi, B. Zhang, X. Li, Demonstration of N-polar III-nitride tunnel junction LED. ACS Photonics 7, 1723 (2020)
Light-Emitting Diodes Materials, Processes, Devices and Applications, J. Li, G. Q. Zhang Editors, (Springer, 2019).
P. Vashishtha, M. Ng, S.B. Shivarudraiah, J.E. Halpert, High Efficiency blue and green light-emitting diodes using ruddlesden-popper inorganic mixed halide perovskites with butylammonium interlayers. Chem. Mater. 31, 83 (2019)
H.S. Wasisto, J.D. Prades, J. Gulink, A. Waag, Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs. Appl. Phys. Rev. 6, 041315 (2019)
M. Anni, Polymer II–VI nanocrystals blends: basic physics and device applications to lasers and LEDs. Nanomaterials 9, 1036 (2019)
K. Yamano, K. Kishino, Selective area growth of InGaN-based nanocolumn LED crystals on AlN/Si substrates useful for integrated μ-LED fabrication. Appl. Phys. Lett. 112, 091105 (2018)
H. Asano, T. Omata, Design of cadmium-free colloidal II–VI semiconductor quantum dots exhibiting RGB emission. AIP Adv. 7, 045309 (2017)
T Garcia, Heterojunction Engineering for Next Generation Hybrid II–VI Materials, PhD Thesis, The City University of New York (2017)
Y. Jang, A. Shapiro, M. Isarov, A. Rubin-Brusilovski, A. Safran, A.K. Budniak, F. Horani, J. Dehnel, A. Sashchiuk, E. Lifshitz, Interface control of electronic and optical properties in IV–VI and II–VI core/shell colloidal quantum dots: a review. Chem. Commun. 53, 1002–1024 (2017)
X. Fang, M. Roushan, R. Zhang, J. Peng, H. Zeng, J. Li, Tuning and enhancing white light emission of II–VI based inorganic-organic hybrid semiconductors as single-phased phosphors. Chem. Mater. 24, 1710–1717 (2012)
D. Bera, L. Qian, T.-K. Tseng, P.H. Holloway, quantum dots and their multimodal applications: a review. Materials 3(4), 2260 (2010)
M. Fox and R. Ispasoiu, (2011) “Quantum wells, superlattices and band-gap engineering,” in Springer Handbook of Electronic and Photonic Materials, edited by S. Kasp and P. Capper (Springer, 2017), pp. 1037; H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells, Opt. Express 19(S4), A991
O. Maksimov, Beryllium chalcogenide alloys for visible light emitting and laser diodes. Rev. Adv. Mater. Sci. 9, 178 (2005)
W.R. Chen, C.J. Huang, ZnSe-based mixed-color LEDs. IEEE Phot. Tech. Lett 16, 1259 (2004)
M.A. Haase, J. Qiu, J.M. DePuydt, H. Cheng, Blue-green laser diodes. Appl. Phys. Lett. 59, 1272 (1991)
B.S. Li, R. Akimoto, K. Akita, H. Hasama, Structural study of (CdS/ZnSe)/BeTe superlattices for λ= 1.55 μm intersubband transition. J. Appl. Phys. 95, 5352 (2004)
J. Kasai, R. Akimoto, H. Kuwatsuka, T. Hasama, H. Ishikawa, S. Fujisaki, T. Kikawa, S. Tanaka, S. Tsuji, H. Nakajima, K. Tasai, Y. Takiguchi, T. Asatsuma, K. Tamamura, 545 nm room-temperature continuous-wave operation of BeZnCdSe quantum-well green laser diodes with low threshold current density. Appl. Phys. Express 3, 091201 (2010)
J.I. Kasai, R. Akimoto, T. Hasama, H. Ishikawa, S. Fujisaki, S. Tanaka, S. Tsuji, ibid Green-to-yellow continuous-wave operation of BeZnCdSe quantum-well laser diodes at room temperature. Appl. Phys. Express 4, 082102 (2011)
J. Kasai, R. Akimoto, T. Hasama, H. Ishikawa, S. Fujisaki, S. Tanaka, S. Tsuji, Green/yellow luminescence from highly strained BeZnCdSe quantum wells grown by molecular beam epitaxy. Phys. Status Solidi C 9, 255–258 (2012). https://doi.org/10.1002/pssc.201100214
J. Feng, R. Akimoto, BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation. Appl. Phys. Lett. 107, 161101 (2015)
R. Akimoto, Recombination-enhanced effect in green/yellow luminescence from BeZnCdSe quantum wells grown by molecular beam epitaxy. J. Electr. Mater. 47, 4226 (2018)
J.H. Chang, J.S. Song, K. Godo, T. Yao, M.Y. Shen, T. Go, ZnCdTe/ZnTe /ZnMgSeTe quantum-well structures for the application to pure-green light-emitting devices. Appl. Phys. Lett. 78, 566 (2001)
S. Che, I. Nomura, A. Kikuchi, K. Kishino, Yellow-green ZnCdSe/BeZnTe II–VI laser diodes grown on InP substrates. Appl. Phys. Lett. 81, 972 (2002)
I. Nomura, A. Manoshiro, A. Kikuchi, K. Kishino, Yellow–green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates. Phys. Status Solidi B 243, 955 (2006)
I. Nomura, Y. Sawafuji, K. Kishino, Photopumped lasing characteristics in green-to-yellow range for BeZnSeTe II–VI compound quaternary double heterostructures grown on InP substrates. Jpn. J. Appl. Phys. 50, 031201 (2011)
J.C. Phillips, Bonds and Bands in semiconductors (Academic, New York, 1973)
D. Sands, Diode lasers (IOP publishing, 2005).
S. Adachi, Properties of Semiconductor Alloys, S. Adachi (Wiley, 2009)
I.F. Chang, S.S. Mitra, Application of a modified random-element-isodisplacement model to long-wavelength optic phonons of mixed crystals. Phys. Rev. 172, 924 (1968)
A. Waag, F. Fischer, H.J. Lugauer, T. Litz, J. Laubender, U. Lunz, U. Zhender, W. Ossau, T. Gerhardt, M. Moller, G. Landwehr, Molecular-beam epitaxy of beryllium-chalcogenide-based thin films and quantum-well structures. J. Appl. Phys. 80, 792 (1996)
A. Waag, F. Fischer, K. Schüll, T. Baron, H.-J. Lugauer, Th. Litz, U. Zehnder, W. Ossau, T. Gerhard, M. Keim, G. Reuscher, G. Landwehr, Laser diodes based on beryllium-chalcogenides. Appl. Phys. Lett. 70, 280 (1997)
V. Wagner, J. Geurts, T. Gerhard, T. Litz, H.-J. Lugauer, F. Fischer, A. Waag, G. Landwehr, T. Walter, D. Gerthsen, Determination of BeTe phonon dispersion by Raman spectroscopy on BeTe/ZnSe-superlattices. Appl. Surf. Sci. 123(124), 580–584 (1998)
T. Walter, A. Rosenauer, R. Wittmann, D. Gerthsen, F. Fischer, T. Gerhard, A. Waag, G. Landwehr, P. Schunk, T. Schimmel, Structural properties of BeTe/ZnSe superlattices. Phys. Rev. B 59, 8114 (1999)
V. Wagner, S. Gundel, J. Geurts, T. Gerhard, T. Litz, H.-J. Lugauer, F. Fischer, A. Waag, G. Landwehr, R. Kruse, C. Becker, U. Kiister, Optical and acoustical phonon properties of BeTe. J. Cryst. Growth 184(185), 1067–1071 (1998)
V. Wagner, J. Geurts Raman, Modulation Spectroscopy at II–VI Semiconductor Interfaces. Phys. Stat. Sol. 184, 29–39 (2001)
I. I. Reshina, S. V. Ivanov, V. A. Kosobukin, S. V. Sorokin, and A. A. Toropov, Acoustic, Optical, and Interface Phonons in BeTe/ZnSe Superlattices, Physics of the Solid State, 45, 1579–1585 (2003); ibid Optical and interface phonons of different kind in BeTe/ZnSe superlattices, phys. stat. sol. (b) 241, 511–514 (2004). https://doi.org/10.1002/pssb.200304162
J.S. Song, J.H. Chang, M.W. Cho, T. Hanada, T. Yao, Growth and characterization of ZnSe/BeTe superlattices. J. Cryst. Growth 229, 104–110 (2001)
A.A. Wronkowska, A. Wronkowski, F. Firszt, S. Łęgowski, Investigation of II–VI alloy lattice dynamics by IR spectroscopic ellipsometry. Cryst. Res. Technol. 41, 580 (2006)
O. Pagès, M. Ajjoun, D. Bormann, C. Chauvet, E. Tournié, and J. P. Faurie, Vibrational evidence for a percolative behavior in Zn1−xBexSe, Phys. Rev. B 65, 035213 (2001).; ibid Appl. Phys. Lett. 80, 3081 (2002); Phys. Rev. B 70, 155319 (2004).
S.V. Ivanov, S.V. Sorokin and I.V. Sedova, Molecular Beam Epitaxy. Ch. 27 Elsevier (2013). https://doi.org/10.1016/B978-0-12-387839-7.00027-0
S.P. Guo, Y. Luo, W. Lin, O. Maksimov, M.C. Tamargo, I. Kuskovsky, C. Tian, G.F. Neumark, High crystalline quality ZnBeSe grown by molecular beam epitaxy with Be–Zn co-irradiation. J. Cryst. Growth 208, 205–210 (2000)
H. Lee, I.Y. Kim, J. Powell, D.E. Aspnes, S. Lee, F. Peiris, J.K. Furdyna, Visible-near ultraviolet ellipsometric study of Zn1−xMgxSe and Zn1−xBexSe alloys. J. Appl. Phys. 88, 878–883 (2000)
K. Wilmers, T. Wethkamp, N. Esser, C. Cobet, W. Richter, V. Wagner, H. Lugauer, F. Fischer, T. Gerhard, M. Keim, M. Cardona, VUV-ellipsometry on BexZn1−xSe and BeTe. J. Electron. Mater. 28, 670 (1999)
M. Nagelstraßer, H. Dröge, H.-P. Steinrück, F. Fischer, T. Litz, A. Waag, G. Landwehr, A. Fleszar, W. Hanke, Band structure of BeTe: A combined experimental and theoretical study. Phys. Rev. B 58, 10394 (1998)
R. Pa ̈ssler, Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III–V, and II–VI materials. Phys. Status Solidi B247, 77–92 (2010). https://doi.org/10.1002/pssb.200945158
B.H. Lee, Pressure dependence of the second-order elastic constants of ZnTe and ZnSe. J. Appl. Phys. 41, 2988 (1970)
R. Khenata, A. Bouhemadou, M. Hichour, H. Baltache, D. Rached, M. Rérat, Elastic and optical properties of BeS, BeSe and BeTe under pressure. Solid-State Electron. 50, 1382–1388 (2006)
R. Dutta, S. Alptekin, N. Mandal, Electronic structure, optical properties and the mechanism of the B3–B8 phase transition of BeSe: Insights from hybrid functionals, lattice dynamics and NPH molecular dynamics. J. Phys. Condens. Matter 25, 125401 (2013)
C.M. Okoye, Structural, electronic, and optical properties of beryllium mono-chalcogenides. Eur. Phys. J. B 39, 5–17 (2004)
P.M. Gonzalez-Diaz, P. Rodriguez-Hernandez, A. Munoz, Elastic constant and electronic structure of beryllium chalcogenides BeS, BeSe and BeTe from first principles calculations. Phys. Rev. B 55, 14043–14046 (1997)
A. Munoz, P. Rodriguez-Hernandez, A. Mujica, Electronic and structural properties of BeSe, BeTe and BeS: Comparison between ab initio theory and experiments. Phys. Status Solidi B 198, 439–446 (1996)
P. Van Camp, V. Van Doren, Ground state properties and structural phase transformation of beryllium sulphide. Solid State Commun. 98, 741–743 (1996)
K. Bouamama, K. Daoud, K. Kassali, Ab initio calculations in the virtual crystal approximation of the structural and the elastic properties of BeSxSe1−x alloys under high pressure. Modell. Simul. Mater. Sci. Eng. 13, 1153–1162 (2005)
Y. Cai, R. Xu, Atomic mechanism of zinc-blende to NiAs high-pressure phase transition in BeTe. J. Phys. Condens. Matter 20, 485218 (2008)
H. Luo, K. Ghandehari, R.G. Greene, A.L. Ruoff, S.S. Trail, F.J. DiSalvo, Phase transformation of BeSe and BeTe to the NiAs structure at high pressure. Phys. Rev. B 52, 7058 (1995)
C. Vérié, in Semiconductors Heteroepitaxy. ed. by B. Gil, R.L. Aulombard (World Scientific, Singapore, 1995), p.73
R.G. Dandrea, C.B. Duke, Design of ohmic contacts to p-ZnSe. Appl. Phys. Lett. 64, 2145 (1994)
W.M. Yim, J.B. Dismakes, E.J. Stofko, R.J. Paff, Synthesis and some properties of BeTe, BeSe and BeS. J. Phys. Chem. Solids 33, 501 (1972)
W. Zachariasen, Über die Kristallstruktur der Telluride von Beryllium, Zink, Cadmium und Quecksilber, Z. Physik Chem. (Leipzing) 119, 210 (1926)
A. Gassoumi, A.M. Alshehria, N. Bouarissa, Electronic structure and optical response for Zn1−xBexSe. Res. Phys. 12, 1294–1298 (2019)
D. Heciri, L. Beldi, S. Drablia, H. Meradji, N.E. Derradji, H. Belkhir, B. Bouhafs, First-principles elastic constants and electronic structure of beryllium chalcogenides BeS, BeSe and BeTe. Comp. Mat. Sci. 38, 609 (2007)
D. Heciri, H. Belkhir, A. Hamidani, M. Bououdina, R. Ahuja, Theoretical investigation of structural, electronic and optical properties of (BeS)1/(BeSe)1, (BeSe)1/(BeTe)1 and (BeS)1/(BeTe)1 superlattices under pressure. Chem. Phys. Lett. 713, 71–84 (2018)
M. Caid, H. Rached, D. Rached, R. Khenata, S. Bin Omran, D. Varshney, B. Abidri, N. Benkhettou, A. Chahed, O. Benhella, Electronic structure and optical properties of (BeTe)n/(ZnSe)m superlattices. Mater. Sci. Poland 34, 115–125 (2016). https://doi.org/10.1515/msp-2016-0004
L. Djoudi, M. Merabet, M. Boucharef, S. Benalia, D. Rached, First-principles calculations to investigate structural, electronic and optical properties of (BeTe)n/(CdS)n superlattices. Superlatt. Microstr. 75, 233 (2014)
I. Khan, I. Ahmad, D. Zhang, H.A.R. Aliabad, S.J. Asadabadi, J. Phys. Chem. Solids 74, 181 (2013)
G.P. Srivastava, H.M. Tütüncü, N. Günhan, First-principles studies of structural, electronic, and dynamical properties of Be chalcogenides. Phys. Rev. B 70, 085206 (2004)
R. Khenata, A. Bouhemadou, M. Sahnoun, H. Ali, H. Reshak, M.R. Baltache, Elastic, electronic and optical properties of ZnS, ZnSe and ZnTe under pressure. Comput. Mater. Sci. 38, 29–38 (2006)
D.N. Talwar, Optical and vibrational properties of Be-Zn chalcogenide alloys and superlattices. Phys. Rev. B 82(085), 207 (2010)
S. Laref, A. Laref, Thermal properties of BeX (X = S, Se and Te) compounds from ab initio quasi-harmonic method. Comput. Mater. Sci. 51, 135–140 (2012)
B. Iyorzor, M. Babalola, E. Aigbekaen, Ab initio calculation of the structural, mechanical and thermodynamic properties of beryllium sulphide (BeS). J. Appl. Sci. Environ. Manage. 22, 41–46 (2018)
Z.-C. Guo, F. Luo, G.-F. Ji, L.-C. Cai, Y. Cheng, First-principles calculation of structural stability, lattice dynamic and thermodynamic properties of BeX (X= S, Se and Te) compounds under high pressure. Phil. Mag. 95, 275 (2015)
A.K. Bhojani, H.R. Soni, P.K. Jha, Strain induced modifications in the structural, electronic, and vibrational properties of beryllium chalcogenides. AIP Adv. 10, 015046 (2020). https://doi.org/10.1063/1.5121832
D.N. Talwar, S. Semone, P. Becla, Interface-induced localization of phonons in BeSe/ZnSe superlattices. Appl. Phys. Lett. 117, 183104 (2020). https://doi.org/10.1063/5.0026067
D.N. Talwar, S. Semone, P. Becla, Comparative study of interfacial strain dependent phonon localization in the beryllium-zinc chalcogenide superlattices. Mat. Chem. Phys. 277, 125523 (2022)
V. Davydov, E. Roginskii, Y. Kitaev, A. Smirnov, I. Eliseyev, D. Nechaev, V. Jmerik, M. Smirnov, Phonons in short-period GaN/AlN superlattices: group-theoretical analysis Ab initio calculations, and Raman spectra. Nanomaterials 11, 286 (2021). https://doi.org/10.3390/nano11020286
S. Baroni, P. Giannozzi, E. Molinari, Phonon spectra of ultrathin GaAs–AlAs superlattices: an ab initio calculation. Phys. Rev. B 41, 3870 (1990)
A.V. Kosobutskii, E.N. Malysheva, Ab initio calculations of phonon spectra of (GaP)n(AlP)m Superlattices. Semiconductors 42, 1208–1213 (2008)
K. Kunc, Dynamique de réseau de composés ANB8-N présentant la structure de la blende. Ann. Phys. (Paris) 8, 319–374 (1973)
P. Plumelle, M. Vandevyver, Lattice dynamics of ZnTe and CdTe. Phys. Stat, Sol. 73, 271 (1976)
A.S. Barker Jr., J.L. Merz, A.C. Gossard, Study of zone-folding effects on phonons in alternating monolayers of GaAs–AlAs. Phys. Rev. B 17, 3181 (1978)
M. Vandevyver, D.N. Talwar, Green’s-function theory of impurity vibrations due to defect complexes in elemental and compound semiconductors. Phys. Rev. B 21, 3405 (1980)
D.N. Talwar, M. Vandevyver, M. Zigone, Impurity induced Raman scattering spectra in zincblende-type crystals: application to mixed indium pnictides. J. Phys. C13, 3775 (1980)
D.N. Talwar, M. Vandevyver, K. Kunc, M. Zigone, Lattice dynamics of zinc chalcogenides under compression: phonon dispersion, mode Grüneisen, and thermal expansion. Phys Rev. B 24, 741 (1981)
D.N. Talwar, M. Vandevyver, Vibrational structure of copper and zinc complexes in GaAs: a theoretical analysis. Phys. Rev. B 25, 6317 (1982)
A. Kobayashi, Ph.D. thesis, Department of Physics, University of Illinois at Urbana-Champaign, 1985.
T. Toriyama, N. Kobayashi, Y. Horikoshi, Lattice vibration of thin-layered AlAs-GaAs superlattices. Jpn. J. Appl. Phys. 25, 1895 (1987)
G. Kanellis, New approach to the problem of lattice dynamics of modulated structures: application to superlattices. Phys. Rev. B 35, 746 (1987)
S.F. Ren, H. Chu, Y.C. Chang, Anisotropy of optical phonons and interface modes in GaAs–AlAs superlattices. Phys. Rev. B 37, 8899 (1988)
S.K. Yip, Y.C. Chang, Theory of phonon dispersion relations in semiconductor superlattices. Phys. Rev. B 30, 7037 (1984)
D.N. Talwar, Optical and vibrational properties of Be-Zn chalcogenide alloys and superlattices. Phys. Rev B 82, 085207 (2010)
D.N. Talwar, T.R. Yang, Z.C. Feng, P. Becla, Infrared reflectance and transmission spectra in II–VI alloys and superlattices. Phys. Rev. B 84, 174203 (2011)
D.N. Talwar, Z.C. Feng, J.F. Lee, P. Becla, Extended x-ray absorption fine structure and micro-Raman spectra of Bridgman grown Cd1−xZnxTe ternary alloys. Mat. Res. Exp. 1, 015018–015112 (2014)
D.N. Talwar, P. Becla, Infrared and Raman characteristics of bulk Cd1−xMnxTe and (MnTe) m/(CdTe) n short period superlattices. Mat. Letts. 175, 279–283 (2016)
A.P.G. Kutty, Phonons in mixed crystals. Solid State Commun. 14, 213–215 (1974)
N. Vagelatos, D. Wehe, J.S. King, Phonon dispersion and phonon densities of states for ZnS and ZnTe. J. Chem. Phys. 60, 3613 (1974)
B. Hennion, F. Moussa, G. Pepy, K. Kunc, Normal modes of vibrations in ZnSe Phys. Lett. A 36, 376 (1971)
K.S. Gavrichev, G.A. Sharpataya, V.N. Guskov, J.H. Greenberg, T. Feltgen, M. Fiederle, K.W. Benz, High-temperature heat capacity and thermodynamic functions of zinc telluride Elsevier. Thermochim. Acta 381, 133 (2002)
J.C. Irwin, J. LaCombe, Specific heats of ZnTe, ZnSe, and GaP. J. Appl. Phys. 45, 567 (1974)
A.F. Demidenko, A.K. Maltsev, The specific heat of ZnTe, within 56–300 K: Entropy and enthalpy of ZnTe, CdS, CdSe and CdTe. Izv. Akad. Nauk SSSR Neorg. Mater. 5, 158–160 (1969)
D.N. Talwar, H.H. Lin, Assessing site selectivity of Si-Ge in GaAs by isotopic dependent vibrational modes. Mater. Sci. Eng., B 279, 115658 (2022)
S. Tamura, J.P. Wolfe, Coupled-mode stop bands of acoustic phonons in semiconductor superlattices. Phys. Rev. B 35, 2528 (1987)
C. Colvard, T.A. Gant, M.V. Klien, R. Merlin, R. Fischer, H. Morkoc, A.C. Gossard, Folded acoustic and quantized optic phonons in (GaAl)As superlattices. Phys. Rev. B 31, 2080 (1985)
D.C. Hurley, S. Tamura, J.P. Wolfe, H. Morkoç, Imaging of acoustic phonon stop bands in superlattices. Phys. Rev. Lett. 58, 2446 (1987)
R. Merlin, C. Colvard, M.V. Klien, H. Morkoc, A.Y. Cho, A.C. Gossard, Raman scattering in superlattices: anisotropy of polar phonons. Appl. Phys. Lett. 36, 43 (1980)
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The author wishes to thank Dr. Deanne Snavely, Dean College of Natural Science and Mathematics at Indiana University of Pennsylvania for the travel support and the Innovation Grant that he received from the School of Graduate Studies making this research possible.
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Talwar, D.N. Strain-induced composition-dependent phonon and thermodynamical characteristics of BeZnX chalcogenide alloys and BeX/ZnX superlattices. Eur. Phys. J. Plus 137, 1360 (2022). https://doi.org/10.1140/epjp/s13360-022-03575-w
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DOI: https://doi.org/10.1140/epjp/s13360-022-03575-w