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Polarization characteristics of shallow-etched SOI ridge waveguide with non-rectangular cross section

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Abstract

To control the polarization of shallow etched ridge waveguide made of crystalline silicon on insulator (SOI), a non-rectangular section SOI waveguide is proposed. The transmittivity formulas of TE0 and TM0 in the proposed waveguide are deduced, and the finite difference time domain method is used for analysis. It is found that the transmittivity of TE0 and TM0 modes shows great deviation in some parameter range; however, the difference is less than 0.03% in some other parameters, which could be regarded as polarization independent. At the same time, the sensitivity to structure parameters of modes in the non-rectangular waveguide is lower than that of the rectangular. Therefore, the proposed non-rectangular SOI ridge waveguide is expected to improve the polarization independence of the waveguide.

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Funding

This work was supported by the National Natural Science Foundation of China (Grant Numbers 61605172, 61705196).

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Authors and Affiliations

  1. College of Sciences, Zhejiang University of Technology, Hangzhou, 310023, China

    Ming Zhang, Xinwei Yao, Hailin Zou, Ying Du & Jun Zou

  2. College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China

    Liqiang Wang

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  1. Ming Zhang
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  3. Hailin Zou
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Correspondence to Ming Zhang.

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This manuscript has not been published or presented elsewhere in part or in entirety and is not under consideration by another journal. We have read and understood your journal’s policies, and we believe that neither the manuscript nor the study violates any of these. There are no conflicts of interest to declare.

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Zhang, M., Yao, X., Zou, H. et al. Polarization characteristics of shallow-etched SOI ridge waveguide with non-rectangular cross section. Eur. Phys. J. Plus 136, 1124 (2021). https://doi.org/10.1140/epjp/s13360-021-02126-z

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  • DOI: https://doi.org/10.1140/epjp/s13360-021-02126-z

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