Abstract
The influence of compositional disorder on ZnxCd1−xS energy band gaps and carrier effective masses has been investigated. The calculations are performed using a pseudopotential approach under the virtual crystal approximation (VCA). A correction to the VCA has been introduced so as to take into consideration the disorder effect. Our results show that the theoretical model used in the present contribution should include the disorder effect in order to describe more accurately the fundamental band gap bowing parameter of the experimental dependence. However, the disorder effect upon electron, light-hole and heavy-hole effective masses in the material system of interest is shown to be weak. Moreover, the trend of the conduction Г, X and L valleys and the nature of the optical fundamental band gap are found to be weakly altered by the alloy disorder. The different photo-catalytic activity of wurtzite and zinc-blende CdS is discussed for a new understanding.
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References
M. Isshiki, J. Wang, Wide-Bandgap II-VI Semiconductors: Growth and Properties, in Springer handbook of electronic and photonic materials. springer handbooks. ed. by S. Kasap, P. Capper (Springer, Cham, 2017)
Ii-Vi Semiconductor Blue/Green Light Emitters, volume 44, 1st Edition, Serial Eds.: R. K. Willardson, E. Weber, Serial volume Eds.: A. Nurmikko, R. Gunshor (Academic Press, 1997)
S. Saib, N. Bouarissa, Phys. Status Solidi B 244(3), 1063–1069 (2007)
L. Hannachi, N. Bouarissa, Phys. B 404(20), 3650–3654 (2009)
D.W. Palmer, Properties of the II-VI Compound Semiconductors,WWW. Semiconductors. CO. UK.
F. Benmakhlouf, A. Bechiri, N. Bouarissa, Solid State-Electron. 47(8), 1335–1338 (2003)
M. Jaros, Rep. Prog. Phys. 48(8), 1091 (1985)
N. Bouarissa, Phys. B 399(2), 126–131 (2007)
A.R. Degheidy, E.B. Elkenany, O.A. Al-frnwani, Comput. Condens. Matter 16, 00300 (2018)
S. Zerroug, F. Ali Sahraoui, N. Bouarissa, Eur. Phys. J. B 57(1), 9–14 (2007)
A.R. Degheidy, E.B. Elkenany, O.A. Al-frnwani, Comput. Condens. Matter 16, e00310 (2018)
L. Hannachi, N. Bouarissa, Superlattice. Microstruct. 44(6), 794–801 (2008)
N. Bouarissa, Mater. Sci. Eng. B 86(1), 53–59 (2001)
F. Mezrag, W. Kara Mohamed, N. Bouarissa, Physica B 405(9), 2272–2276 (2010)
S. Adachi, Properties of Semiconductor Alloys: Group-IV, III–V and II–VI Semiconductors (John Wiley and Sons Ltd., Chichester, 2009) and references therein.
P. Chen, J.E. Nicholls, M. O’Neill, J.H.C. Hogg, B. Lunn, D.E. Ashenford, M. Fay, A.G. Cullis, Semicond. Sci. Technol. 13(12), 1439 (1998)
J. Torres, J.I. Cisneros, G. Gordillo, F. Alvarez, Thin Solid Films 289(1–2), 238–241 (1996)
J. Zhang, S. Wageh, A.A. Al-Ghamdi, J. Yu, Appl. Catalys. B: Environm. 192, 101–107 (2016)
N. Bouarissa, Mater. Chem. Phys. 100(1), 41–47 (2006)
S.J. Lee, T.S. Kwon, K. Nahm, C.K. Kim, J. Phys. Condens. Matter 2(14), 3253 (1990)
N. Bouarissa, Phys. Lett. A 245(3–4), 285–291 (1998)
N. Bouarissa, Superlattice. Microstruct. 26(4), 279–287 (1999)
A. Bechiri, F. Benmakhlouf, N. Bouarissa, Mater. Chem. Phys. 77(2), 507–510 (2003)
M.L. Cohen, J.R. Chelikowsky, Electronic Structure and Optical Properties of Semiconductors (Springer, Berlin, 1988).
R.M. Martin, Electronic Structure: Basic Theory and Practical Methods (Cambridge University Press, Berlin, 2004).
T. Kobayasi, H. Nara, Bull. Coll. Med. Sci. Tohuku Univ. 2, 7–16 (1993)
A. Bechiri, N. Bouarissa, Superlattice Microst. 39(6), 478–488 (2006)
N. Bouarissa, M. Boucenna, Phys. Scr. 79(1), 015701 (2009)
Y.P. Feng, K.L. Teo, M.F. Li, H.C. Poon, C.K. Ong, J.B. Xia, J. Appl. Phys. 74(6), 3948–3955 (1993)
U. Lunz, C. Schumacher, J. Nurmberger, K. Schull, A. Gerhard, U. Schüssler, B. Jobst, W. Faschinger, G. Landwehr, Semicond. Sci. Technol. 12(8), 970 (1997)
O. Madelung (ed.), Semiconductors-Basic Data (Springer, Berlin, 1996)
K. Kassali, N. Bouarissa, Mater. Chem. Phys. 76(3), 255–261 (2002) and references therein.
L. Vegard, Z. Phys. 5, 17–26 (1921)
N. Bouarissa, J. Phys. Chem. Solids. 67(7), 1440–1443 (2006)
P. Liao, E.A. Carter, Chem. Soc. Rev. 42, 2401 (2013)
M. Dong, J.F. Zhang, J. Yu, Appl. Phys. Lett. Mater. 3, 104404 (2015)
T. Yokogawa, T. Ishikawa, J.L. Merz, T. Taguchi, J. Appl. Phys. 75(4), 2189–2193 (1994)
N. Bouarissa, S. Bougouffa, A. Kamli, Semicond. Sci. Technol. 20(3), 265 (2005)
W. Nakwaski, Physica B 210(1), 1–25 (1995) and references therein.
S. Adachi, J. Appl. Phys. 58(3), R1–R29 (1985)
S. Adachi, Properties of Group-IV, III-V, and II-VI Semiconductors (Wiley, Chichester, 2005).
T.L. Bahers, M. Rérat, P. Sautet, J. Phys. Chem. C 118, 5993 (2014)
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Nadir Bouarissa supervised the findings of this work and performed the computations. Fadila Mezrag verified the analytical methods; and Najoua Turki-Kamoun developed the theory. All authors discussed the results and contributed to the final manuscript.
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Bouarissa, N., Mezrag, F. & Turki-Kamoun, N. Disorder effect upon energy band gaps and carrier effective masses of ZnxCd1−xS. Eur. Phys. J. Plus 136, 724 (2021). https://doi.org/10.1140/epjp/s13360-021-01526-5
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DOI: https://doi.org/10.1140/epjp/s13360-021-01526-5