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Enhanced magnetoresistance in hydrogen- and fluorine-passivated zigzag aluminium nitride nano-ribbon

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Abstract

Using density functional theory, we predict junctionless magnetoresistive device (JMD) using edge-passivated zigzag aluminium nitride nano-ribbon (ZAlNNR) for application in magnetoresistive random access memories (MRAMs). The results suggest that the conductivity of ZAlNNR can be modulated by passivating the nano-ribbon edges with hydrogen (H) and fluorine (F) atoms. A semiconducting ZAlNNR results when aluminium (Al) and nitrogen (N) atoms on both the edges of ZAlNNR are passivated by hydrogen or fluorine. A half-metallic nano-ribbon results when the edge consisting of aluminium atoms is passivated by hydrogen or fluorine, whereas a metallic nano-ribbon results when the edge consisting of nitrogen atoms is passivated by hydrogen or fluorine. A junctionless ZAlNNR JMD can thus be formed by selectively passivating the electrodes (half-metallic) and central region (semiconducting). The fluorine-passivated junctionless device offers higher magneto-resistance (MR) and better spin-filtering effect in comparison with hydrogen-passivated device. Smaller device fabrication complexity can also be expected due to a junctionless structure.

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  1. NIT Kurukshetra, Kurukshetra, 136119, India

    Sudhanshu Choudhary & Manish Kumar

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  1. Sudhanshu Choudhary
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Correspondence to Sudhanshu Choudhary.

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Choudhary, S., Kumar, M. Enhanced magnetoresistance in hydrogen- and fluorine-passivated zigzag aluminium nitride nano-ribbon. Eur. Phys. J. Plus 135, 926 (2020). https://doi.org/10.1140/epjp/s13360-020-00945-0

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