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Toward a measurement of the effective gauge field and the Born–Huang potential with atoms in chip traps

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Abstract

We study magnetic traps with very high trap frequencies where the spin is coupled to the motion of the atom. This allows us to investigate how the Born–Oppenheimer approximation fails and how effective magnetic and electric fields appear as the consequence of the non-adiabatic dynamics. The results are based on exact numerical diagonalization of the full Hamiltonian describing the coupling between the internal and external degrees of freedom. The position in energy and the decay rate of the trapping states corresponding to the imaginary part of the resonances of this Hamiltonian are computed using the complex rotation method.

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Data Availability Statement

This manuscript has no associated data or the data will not be deposited [Author’s comment: All data generated or analyzed during this study are included in this published article].

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Acknowledgements

The Centre for Quantum Technologies is a Research Centre of Excellence funded by the Ministry of Education and National Research Foundation of Singapore. E. S. acknowledges financial support from the Swedish Research Council (VR) through Grant No. D0413201. The project leading to this publication has received funding from Excellence Initiative of Aix-Marseille University - A*MIDEX, a French “Investissements d’Avenir” program through the IPhU (AMX-19-IET-008) and AMUtech (AMX-19-IET-01X) institutes.

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Author notes

  1. Erik Sjöqvist, Björn Hessmo and Benoît Grémaud are contributed equally to this work.

Authors and Affiliations

  1. College of Engineering and Technology, American University of the Middle East, 54200, Egaila, Kuwait

    Zeynep Nilhan Gürkan

  2. Department of Physics and Astronomy, Uppsala University, Box 516, 751 20, Uppsala, Sweden

    Erik Sjöqvist

  3. Department of Applied Physics, Royal Institute of Technology, 106 91, Stockholm, Sweden

    Björn Hessmo

  4. Aix Marseille Univ, Université de Toulon, CNRS, CPT, IPhU, AMUTech, Marseille, France

    Benoît Grémaud

  5. Centre for Quantum Technologies, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore

    Björn Hessmo & Benoît Grémaud

Authors
  1. Zeynep Nilhan Gürkan
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  2. Erik Sjöqvist
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  3. Björn Hessmo
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  4. Benoît Grémaud
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All authors contributed equally to this paper.

Corresponding author

Correspondence to Zeynep Nilhan Gürkan.

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Gürkan, Z.N., Sjöqvist, E., Hessmo, B. et al. Toward a measurement of the effective gauge field and the Born–Huang potential with atoms in chip traps. Eur. Phys. J. D 76, 137 (2022). https://doi.org/10.1140/epjd/s10053-022-00461-z

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  • DOI: https://doi.org/10.1140/epjd/s10053-022-00461-z

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