Abstract
The drift velocity of photo-generated electrons in CdTe by lasers with wavelengths of 532, 355, and 266 nm is studied by the Monte Carlo method. The effects of laser wavelengths on the electron drift velocity are systematically investigated under various laser fluxes, doping densities, and temperatures. It is found that the drift velocity as a function of electric field \({v}_{\mathrm{d}}(E)\) has a close relationship with the laser wavelengths: the electron drift velocity in CdTe becomes larger when a longer photoexcitation wavelength is used. On the other hand, the doping effect, as well as the effect of the laser energy flux, on the \({v}_{\mathrm{d}}(E)\) dependence demonstrates different characteristics for different laser wavelengths. The difference in electron drift velocity caused by the various wavelengths reduces with increasing temperatures. In the case of a low laser energy flux, doping in CdTe plays a remarkable role in \({v}_{\mathrm{d}}(E)\) relations. These new results are helpful in understanding the microscopic mechanism of relaxation processes of photo-excited carriers and applications of CdTe-based optoelectronic devices.
Graphical abstract
Similar content being viewed by others
Data availability
The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request. This manuscript has no associated data or the data will not be deposited.
References
P. Gorai, D. Krasikov, S. Grover, G. Xiong, W. Metzger, V. Stevanovic, Sci. Adv. 9, 1 (2023)
P. Ščajev, A. Mekys, L. Subačius, S. Stanionytė, D. Kuciauskas, K. Lynn, S. Swain, Sci. Rep. 12, 12851 (2022)
A. Rogalski, Infrared Phys. Technol. 43, 187 (2002)
S. Sordo, L. Abbene, E. Caroli, A. Mancini, A. Zappettini, P. Ubertini, Sensors 9, 3491 (2009)
D. Chenault, R. Chipman, S. Lu, Appl. Opt. 33, 7382 (1994)
G. Hu, B. Li, H. Li, H. Cao, Z. Ren, D. Zhao, W. Li, L. Wu, J. Zhang, Sol. Energy Mater. Sol. Cells 247, 111925 (2022)
V. Djurberg, S. Majdi, N. Suntornwipat, J. Isberg, Material 14, 4202 (2021)
H. Desai, P. Patel, J. Dhimmar, B. Modi, Solid State Commun. 313, 113910 (2020)
H. Sun, H. Ma, J. Leng, Materials 13, 242 (2020)
Y. Chen, T. Shu, T. Lai, H. Wu, Res. Phys. 31, 105047 (2021)
Y. Zhong, D. Ostach, M. Scholz, S.W. Epp, S. Techert, I. Schlichting, J. Ullrich, F.S. Krasniqi, J. Phys. Condens. Matter 29, 095701 (2017)
X. He, N. Punpongjareorn, C. Wu, I. Davydov, D. Yang, J. Phys. Chem. C 120, 9350 (2016)
J. Fink, H. Krüger, P. Lodomez, N. Wermes, Nucl. Instrum. Methods Phys Res. Sect. A Acceler. Spectrom. Detect. Assoc. Equip. 560, 435 (2006)
H. Ma, Z. Jin, G. Ma, W. Liu, S. Tang, Appl. Phys. Lett. 94, 241112 (2009)
V. Borsari, C. Jacoboni, Phys. Status Solidi B 54, 649 (1972)
G. Fonthal, L. Tirado-Mejia, J. Hurtado, H. Calderon, J.G. Mendoza-Alvarezc, J. Phys. Chem. Solids 61, 579 (2000)
C. Jacoboni, P. Lugli, The Monte Carlo method for semiconductor device simulation, 1st edn. (Springer, Wien, 1989)
J. Prajapati, M. Bharadwaj, A. Chatterjee, R. Bhattacharjee, IEEE Trans. Microw. Theory Tech. 66, 678 (2018)
J. Yang, L. Shi, L. Wang, S. Wei, Sci. Rep. 6, 21712 (2016)
R. MickeviEius, A. Reklaitis, Second. Sci. Technol. 5, 805 (1990)
M. Lundstrom, Fundamentals of carrier transport, 2nd edn. (Cambridge University Press, Cambridge, 2000)
K. Boujdaria, O. Zitouni, Solid State Commun. 129, 205 (2004)
M. Liyu, M. Islam, N. Hamzah, M. Karim, M. Matin, K. Sopian, N. Amin, Int. J. Photoenergy 12, 351381 (2012)
D. Yadav, F. Pauly, M. Trushin, Phys. Rev. B 103, 125113 (2021)
A. Reklaitis, A. Krotkus, G. Grigaliunaite, Semicond. Sci. Technol. 14, 945 (1999)
R. Cohen, V. Lyahovitskaya, E. Poles, A. Liu, Y. Rosenwaks, Appl. Phys. Lett. 73, 1400 (1998)
P. Sellin, A. Davies, A. Lohstroh, M. Ozsan, J. Parkin, IEEE Trans. Nucl. Sci. 52, 3074 (2005)
V. Borsari, C. Jacobont, Monte Carlo calculations on electron transport in CdTe. Phys. Stat. Sol. B 64, 649 (1972)
E. Deligoz, K. Colakoglu, Y. Ciftci, Elastic, electronic, and lattice dynamical properties of CdS, CdSe, and CdTe. Phys. B 373, 124–130 (2006)
G. Fonthal, L. Tirado-Mejia, J. Hurtado, H. Calderon, J.G. Mendoza-Alvarezc, Temperature dependence of the band gap energy of crystalline CdTe. J. Phys. Chem. Solids 61, 579–583 (2000)
V. Djurberg, S. Majdi, N. Suntornwipat, J. Isberg, Investigation of photoexcitation energy impact on electron mobility in single crystalline CdTe. Material 14, 4202 (2021)
W. Sun, L. Li, H. Cai, J. Li, H. Yin, Y. Zhu, Dielectric and vibrational properties of CdTe studied by first-principles and terahertz time-domain spectroscopy. Phys. B Condens. Matter 602, 412543 (2021)
D. Yadav, F. Pauly, M. Trushin, Charge-carrier thermalization in bulk and monolayer CdTe from first principles. Phys. Rev. B 103(12), 125113 (2021)
Acknowledgements
This work is supported by Science and Technology Program of Guangzhou, China (Grant no. 201804010444).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Liu, D. The wavelength dependence of drift velocities of photogenerated electrons in CdTe. Eur. Phys. J. B 96, 129 (2023). https://doi.org/10.1140/epjb/s10051-023-00595-y
Received:
Accepted:
Published:
DOI: https://doi.org/10.1140/epjb/s10051-023-00595-y