Abstract
In this study, we have investigated the electronic and magnetic characteristics of doped and co-doped 3D SiC material using the main Korringa–Kohn–Rostoker (KKR) Green’s function technique combined with coherent potential approximation (CPA). Two impurities are considered, namely, chromium (Cr) and manganese (Mn), are considered. Density of state (DOS) calculations show that pure SiC is an N-type semiconductor with a 1.3eV band-gap energy, while substituting Si with Cr/Mn leads to a metallic behavior. Electronic structure calculations also reveal no magnetic order in the pure compounds, consistent with experiments. By comparing the energies of the ferromagnetic and spin-glass states, we have showed that impurities also induce ferromagnetism compounds. Furthermore, for each concentration, the polarization is determined from the density of carriers at the Fermi level. Finally, the Curie temperature (\( T_{C} \)) is calculated by the mean-field approach at concentrations near the percolation threshold. In both cases of Cr/Mn dopants, the value of \(T_{C}\) is found to be greater than ambient temperature.
Graphic abstract
Similar content being viewed by others
Data availability statements
This manuscript has no associated data or the data will not be deposited. [Authors’ comment: There is no data in this article, all results have been shared in the publication.]
References
T. Dietl, Nat. Mater. 9, 965–974 (2010)
K. Sato, L. Bergqvist, J. Kudrnovský, P.H. Dederichs, O. Eriksson, I. Turek, R. Zeller, First-principles theory of dilute magnetic semiconductors. Rev. Mod. Phys. 82(2), 1633 (2010). https://doi.org/10.1103/RevModPhys.82.1633
S. Kumar, Y.J. Kim, B.H. Koo, C.G. Lee, Structural and magnetic properties of Ni doped CeO2 nanoparticles. J. Nanosci. Nanotechnol. 10(11), 7204–7207 (2010). https://doi.org/10.1166/jnn.2010.2751
I. Akasaki, Nobel Lecture: Fascinated journeys into blue light. Rev. Mod. Phys. 87(4), 1119 (2015). https://doi.org/10.1103/RevModPhys.87.1119
H. Amano, Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation. Rev. Mod. Phys. 87, 1133 (2015). https://doi.org/10.1103/RevModPhys.87.1133
S. Berri, The electronic structure and spin polarization of Co2Mn0. 75 (Gd, Eu) 0.25 Z (Z= Si, Ge, Ga, Al) quaternary Heusler alloys. J. Magn. Magn. Mater. 401, 667–672 (2016). https://doi.org/10.1016/j.jmmm.2015.10.101
M. Ren, X. Feng, P. Li, X. Liu, Z. Zhang, A first-principles study of ferromagnetism in Pd-doped ZnO. Solid State Commun. 151(11), 864–866 (2011). https://doi.org/10.1016/j.ssc.2011.03.008
S. Wang, J. Yu, Magnetic behaviors of 3d transition metal-doped silicane: a first-principle study. J. Supercond. Nov. Magn. 31(9), 2789–2795 (2018). https://doi.org/10.1007/s10948-017-4532-4
T. Jungwirth, J. Sinova, J. Masek, Theory of ferromagnetic (III, Mn) V semiconductors. Rev. Mod. Phys. 78(3), 809 (2006). https://doi.org/10.1103/RevModPhys.78.809
A. Bonanni, Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths. Semicond Sci Technol. 22(9), R41 (2007). https://doi.org/10.1088/0268-1242/22/9/R01
M. Sun, Q. Ren, S. Wang, Y. Zhang, Y. Du, J. Yu, W. Tang, Magnetism in transitionmetal- doped germanene: a first-principles study. Comput. Mater. Sci. 118, 112–116 (2016). https://doi.org/10.1016/j.commatsci.2016.03.006
M. Sun, Q. Ren, Y. Zhao, S. Wang, J. Yu, W. Tang, Magnetism in transition metal-substituted germanane: A search for room temperature spintronic devices. J. Appl. Phys. 119(14), 143904 (2016). https://doi.org/10.1063/1.4945771
M. Rostami, M. Moradi, Z. Javdani, H. Salehi, The electronic, magnetic and optical properties of Cr-doped MC (M= Si, Ge and Sn): a density functional theory approach. Mater. Sci. Semicond. Process. 38, 218–227 (2015). https://doi.org/10.1016/j.mssp.2015.04.034
M. Luo, H.H. Yin, Y.H. Shen, Magnetic Properties in Nonmagnetic Metal Atom Adsorption on SiC Monolayer: First-Principles Study. J. Supercond. Nov. Magn. 31(4), 1235–1240 (2018). https://doi.org/10.1007/s10948-017-4310-3
H. Matsunami, Fundamental research on semiconductor SiC and its applications to power electronics. Proc. Jpn. Acad. B: Phys. Biol. Sci. 96(7), 235–254 (2020). https://doi.org/10.2183/pjab.96.018
J. Wang, L. Zhang, Q. Zeng, G.L. Vignoles, A. Guette, Theoretical investigation for the active-to-passive transition in the oxidation of silicon carbide. J. Am. Ceram. 91(5), 1665–1673 (2008). https://doi.org/10.1111/j.1551-2916.2008.02353.x
D. Chaussende, P.J. Wellmann, M. Pons, Status of SiC bulk growth processes. J. Phys. D J PHYS D APPL PHYS 40(20), 6150 (2007). https://doi.org/10.1088/0022-3727/40/20/S02
C.M. DiMarino, R. Burgos, B. Dushan, High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors. IEEE Industrial Electronics Magazine 9(3), 19–30 (2015). https://doi.org/10.1109/MIE.2014.2360350
K. Watari, High thermal conductivity non-oxide ceramics. J. Ceram. Soc. JAPAN. 109(1265), S7–S16 (2001). https://doi.org/10.2109/jcersj.109.S7
L. Malakkal, B. Szpunar, R.K. Siripurapu, J.A. Szpunar, Thermal conductivity of bulk and nanowire of cubic-SiC from ab initio calculations. Comput. Mater. Sci. 128, 249–256 (2017). https://doi.org/10.1016/j.commatsci.2016.11.040
E. Bekaroglu, M. Topsakal, S. Cahangirov, S. Ciraci, First-principles study of defects and adatoms in silicon carbide honeycomb structures. Phys. Rev. B. 81(7), 075433 (2010). https://doi.org/10.1103/PhysRevB.81.075433
P. Lou, J.Y. Lee, Electrical control of magnetization in narrow zigzag silicon carbon nanoribbons. J. Phys. Chem. C. 113(50), 21213–21217 (2009). https://doi.org/10.1021/jp906558y
M.B. Javan, Electronic and magnetic properties of monolayer SiC sheet doped with 3dtransition metals. J. Magn. Magn. Mater. 401, 656–661 (2016). https://doi.org/10.1016/j.jmmm.2015.10.103
L. Lin, J. Huang, L. Zhu, H. Tao, P. Wang, J. Zhang, Z. Zhang, Electronic structures and magnetic properties of (Al, Cr) co-doped 4H-SiC: a first-principles study. Mater. Res. Express. 6(9), 096316 (2019). https://doi.org/10.1088/2053-1591/ab1a87
W. Wang, F. Takano, H. Ofuchi, H. Akinaga, Local structural, magnetic and magneto-optical properties of Mn-doped SiC films preparedon a 3C-SiC(001) wafer. New J. Phys. 10(5), 055006 (2008). https://doi.org/10.1088/1367-2630/10/5/055006
L. Tan, T.R. Allen, P. Demkowicz, High temperature interfacial reactions of TiC, ZrC, TiN, and ZrN with palladium. Solid State Ion. 181(25–26), 1156–1163 (2010). https://doi.org/10.1016/j.ssi.2010.06.054
K.K. Korir, G.O. Amolo, N.W. Makau, D.P. Joubert, First-principle calculations of the bulk properties of 4d transition metal carbides and nitrides in the rocksalt, zincblende and wurtzite structures. Diam. Relat. Mater. 20(2), 157–164 (2011). https://doi.org/10.1016/j.diamond.2010.11.021
Z. Bounouala, F. Goumrhar, L.B. Drissi, R. Ahl Laamara, Half-metallic behavior inzirconium carbide (ZrC) doped with Cr and Mn. Comput. Condens. Matter. 27, e00553 (2021). https://doi.org/10.1016/j.cocom.2021.e00553
K.K. Eric Abavare, N.A. Samuel Dodoo, K. Uchida, K.G. Nkurumah-Buandoh, A. Yaya, A. Oshiyama, Indirect phase transition of TiC, ZrC, and HfC crystal structures. Phys. Status Solidi B 253(6), 1177–1185 (2016). https://doi.org/10.1002/pssb.201552793
N. Mediane, F. Goumrhar, L.B. Drissi, K. Htoutou, R. Ahl Laamara, Enhanced Electronic and Magnetic Properties of Cr- and Mn-Doped GeC Zinc Blende. J. Supercond. Nov. Magn. 33, 2513–2520 (2020). https://doi.org/10.1007/s10948-019-05397-x
T. El-Achari, F. Goumrhar, L.B. Drissi, R. Ahl Laamara, Half-metallicity in V doped tin-carbide SnC. Comput. Condens. Matter. 25, e00504 (2020). https://doi.org/10.1016/j.cocom.2020.e00504
G. Chikvaidze, N. Mironova-Ulmane, A. Plaude, O. Sergeev, Investigation of Silicon Carbide Polytypes by Raman Spectroscopy. Latv. J. Phys. Tech. Sci. 51(3), 51–57 (2014). https://doi.org/10.2478/lpts-2014-0019
A. Ghosh, C. Varadachari, derivations of a direct band gap semiconductor of SiC doped with Ge. J. Electron. Mater 44(1), 167–176 (2015). https://doi.org/10.1007/s11664-014-3424-7
H. Akai, MACHIKANEYAMA2002v08, Department of Physics, Graduate School of Science, Osaka University, Machikaneyama 1?1, Toyonaka 560?0043, Japan, http://www.akai.phys.sci.osaka-u.ac.jp
M. Woloszyn, A.Z. Maksymowicz, Coherent potential approximation technique in a simple example of resistivity calculations for binary alloys. Q. Rev 6(4), 669–680 (2002)
V.L. Moruzzi, J.F. Janak, A.R. Williams, Calculated electronic properties of metals. Elsevier sci. (2013)
G.L. Zhao, D. Bagayoko, Electronic structure and charge transfer in 3C-and 4H-SiC. New J. Phys. 2(1), 16 (2000). https://doi.org/10.1088/1367-2630/2/1/316
F.C. Pan, Z.P. Chen, X.L. Lin, F. Zheng, X.M. Wang, H.M. Chen, Electronic structure and magnetic properties of (Cu, N)-codoped 3C-SiC studied by first-principles calculations. Chin. Phys. B. 25(9), 096108 (2016). https://doi.org/10.1088/1674-1056/25/9/096108
\( Wycko_RWG \), Crystal Structures (Wiley, New York, 1964)
C.T. Lee, L.H. Tsai, Y.H. Lin, G.R. Lin, A chemical vapor deposited silicon rich silicon carbide PN junction based thin-film photovoltaic solar cell. ECS J. Solid State Sci. Technol. 1(6), Q144 (2012). https://doi.org/10.1149/2.005301jss
Z. Huang, T.Y. Lu, H.Q. Wang, J.C. Zheng, Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO. AIP Adv. 5(9), 097204 (2015). https://doi.org/10.1063/1.4931820
T. El-Achari, F. Goumrhar, L.B. Drissi, R. Ahl Laamara, Structural, electronic and magnetic properties of Mn doped CeO2: An ab-initio study. Phys. Rev. B Condens. Matter 601, 412443 (2021). https://doi.org/10.1016/j.physb.2020.412443
T. El-Achari, F. Goumrhar, L.B. Drissi, R. Ahl Laamara, Electronic and magnetic properties of (Ti, V, Cr, Mn, and Co)-doped CdS. J. Supercond. Nov. Magn. 34(7), 1923 (2021). https://doi.org/10.1007/s10948-021-05839-5
P. Bondavalli, Graphene and Spintronics, the Good Match In Graphene and Related Nanomaterials (Elsevier, Amsterdam, 2018), pp.137–156
H. Akai, P.H. Dederichs, Local moment disorder in ferromagnetic alloys. Phys. Rev. B 47(14), 8739 (1993). https://doi.org/10.1103/PhysRevB.47.8739
S. Khmelevskyi, T. Khmelevska, A.V. Ruban, P. Mohn, Magnetic exchange interactions in the paramagnetic state of hcp Gd. J. Phys. Condens. Matter 19(32), 326218 (2007). https://doi.org/10.1088/0953-8984/19/32/326218
Acknowledgements
The authors would like to acknowledge the “Académie Hassan II des Sciences et Techniques”-Morocco for its financial support. The authors would also like to hank the LPHE-MS, Faculty of Sciences, Mohammed V University in Rabat, Morocco for the technical support through computer facilities, where all the calculations have been performed.
Author information
Authors and Affiliations
Contributions
All authors have contributed equally to the paper.
Corresponding author
Ethics declarations
Conflict of interest
The authors declare that they have no conflict of interest.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Elarari, I., Mediane, N., Goumrhar, F. et al. Electronic and magnetic behaviors of Cr and Mn (co)-doped zinc-blende SiC compound. Eur. Phys. J. B 96, 97 (2023). https://doi.org/10.1140/epjb/s10051-023-00562-7
Received:
Accepted:
Published:
DOI: https://doi.org/10.1140/epjb/s10051-023-00562-7