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The second and third harmonic generation of GaAs/Ga\(_{1-x}\)Al\(_{x}\)As spherical quantum dots under a confining potential

  • Regular Article - Mesoscopic and Nanoscale Systems
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Abstract

The objective of this study is to theoretically discuss the impact of additional tuning factors on the second and third harmonic generation (SHG and THG) of GaAs/Ga\(_{1-x}\)Al\(_{x}\)As quantum dots (QDs) with the inversely quadratic Hellmann–Kratzer (IQHK) potential by adjusting the depth of potential and radius of the QDs. Within the formula method, the energy levels and the corresponding wave-functions are calculated by solving the Schrödinger equation. Then, the SHG and THG coefficients are deduced using the density matrix formalism with an iterative procedure. Finally, the results indicate that the additional tuning factors and structural parameters have significant effects on the peak positions and magnitudes of the calculated SHG and THG coefficients.

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This manuscript has no associated data or the data will not be deposited. [Author’s comment: The all data that support the findings of this manuscript are available upon request by contacting the corresponding author.]

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 51702003, 61775087, 11674312, 52174161, and 12174161), the Provincial Foundation for Excellent Top Talents of Colleges and Universities of Anhui Province of China (Grant No. gxgwfx2019016), the Anhui Provincial Natural Science Foundation, China (Grant Nos. 1808085ME130 and 1508085QF140), and University Outstanding Young Talents Support Program Fund (Grant No. gxyqZD2018039).

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  1. School of Mechanics and Optoelectronics Physics, Anhui University of Science and Technology, Huainan, 232001, China

    Yiming Duan & Xuechao Li

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  1. Yiming Duan
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Correspondence to Xuechao Li.

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Duan, Y., Li, X. The second and third harmonic generation of GaAs/Ga\(_{1-x}\)Al\(_{x}\)As spherical quantum dots under a confining potential. Eur. Phys. J. B 95, 84 (2022). https://doi.org/10.1140/epjb/s10051-022-00348-3

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