Second-Harmonic Generation in Vertically Coupled InAs/GaAs Quantum Dots with a Gaussian Potential Distribution: Combined Effects of Electromagnetic Fields, Pressure, and Temperature

Simulation of quantum dots (QD) is usually performed on the basis of abrupt changes between neighboring materials. In practice, it is not possible to construct such QD because in a real structure the interface between two adjacent materials is not a step. In the work discussed in this paper, vertically coupled InAs/GaAs quantum dots (VCQD) with a non-abrupt change between two neighboring materials are considered. A potential function in the form of a Gaussian distribution was used to show this effect. We also focused on studying the effect of structure, applied electric (F) and magnetic (B) fields, pressure (P), and temperature (T) on second-harmonic generation (SHG). The analytical expression for SHG was investigated theoretically by use of the density matrix approach, the effective mass, and the finite-difference method (FDM). It was found that the major resonant peak value of SHG is a non-monotonic function of the barrier width (L _B). Moreover, the major resonant peak of SHG is blue-shifted (red-shifted) and its magnitude increases (decreases) monotonically with increasing temperature (pressure). The results obtained also show that the magnitude and position of the resonant peaks of SHG are affected by changes in external conditions, for example applied electric and magnetic fields, structural dimensions of the coupled QD system, and relaxation time (T ₀). Calculations also show that SHG in a VCQD structure with a non-abrupt potential change can be controlled and optimized by appropriate choice of structural dimensions and the external conditions mentioned above.