Abstract
The presence of hydrogen in solar cells based on chalcopyrite CuInSe\(_2\) (CIS) absorbers has been linked with improvements in structural properties and cell performance but also with detrimental reliability issues. A major concern is to understand how hydrogen interacts with the absorber-buffer CIS/CdS heterojunction which is the main building block of a typical thin-film solar cell, with CdS most commonly used as the buffer layer. The present study reports calculations based on density-functional theory that examine the segregation propensity of single hydrogen impurities at the interfacial region of the CIS/CdS heterojunction. Two distinct interface variants of the heterojunction were constructed by joining the polar {112} crystalline planes of the absorber (CIS) and buffer (CdS) lattices. Ordered point defects comprising copper vacancies and cation antisites were created to stabilize the {112} facets. The calculations provide detailed information on the type of configurations that hydrogen impurities can form locally at the CIS/CdS interfaces and their defect association with the stabilizing point defects. Essential aspects of the local electronic structure such as the electron spatial localization and the position of the defect-induced levels were also determined.
Graphical abstract
Similar content being viewed by others
Data Availability Statement
This manuscript has no associated data or the data will not be deposited. [Authors’ comment: The manuscript has no associated data beyond the ones presented. Further data that support the findings of this study are available from the author upon reasonable request.]
References
S.-H. Wei, S.B. Zhang, A. Zunger, J. Appl. Phys. 85, 7214 (1999)
U. Rau, H.W. Schock, Appl. Phys. A 69, 131–147 (1999)
C. Persson, Y.-J. Zhao, S. Lany, A. Zunger, Phys. Rev. B 72, 035211 (2005)
A. Zunger, Thin Solid Films 515, 6160–6162 (2007)
L.E. Oikkonen, M.G. Ganchenkova, A.P. Seitsonen, R.M. Nieminen, J. Appl. Phys. 114, 083503 (2013)
E. Ghorbani, J. Kiss, H. Mirhosseini, G. Roma, M. Schmidt, J. Windeln, T.D. Kühne, C. Felser, J. Phys. Chem. C 119, 25197–25203 (2015)
S. Siebentritt, E. Avancini, M. Bär et al., Adv. Energy Mater. 10, 1903752 (2020)
M.V. Yakushev, I.I. Ogorodnikov, V.A. Volkov, A.V. Mudryi, J. Vac. Sci. Technol. A 29, 051201 (2011)
S. Ishizuka, H. Shibata, A. Yamada, P. Fons, K. Sakurai, K. Matsubara, S. Niki, M. Yonemura, H. Nakanishi, J. Appl. Phys. 100, 096106 (2006)
N. Maticiuc, A. Katerski, M. Danilson, M. Krunks, J. Hiie, Sol. Energy Mater. Sol. Cells 160, 211–216 (2017)
K. Otte, G. Lippold, H. Neumann, A. Schindler, J. Phys. Chem. Solids 64, 1641–1647 (2003)
Ç. Kılıç, A. Zunger, Phys. Rev. B 68, 075201 (2003)
Ç. Kılıç, A. Zunger, Appl. Phys. Lett. 83, 2007–2009 (2003)
J.B. Varley, V. Lordi, T. Ogitsu, A. Deangelis, K. Horsley, N. Gaillard, J. Appl. Phys. 123, 161408 (2018)
J.M. Gil, P.J. Mendes, L.P. Ferreira, H.V. Alberto, R.C. Vilão, N.A. de Campos, A. Weidinger, Y. Toms, C. Niedermayer, M.V. Yakushev, R.D. Tomlinson, S.P. Cottrell, S.F.J. Cox, Phys. Rev. B 59, 1912 (1999)
R.C. Vilão, H.V. Alberto, J.M. Gil, J.P. Duarte, N.A. de Campos, A. Weidinger, M.V. Yakushev, Phys. B 340–342, 965–968 (2003)
H.V. Alberto, R.C. Vilão, R.B.L. Vieira, J.M. Gil, A. Weidinger, M.G. Sousa, J.P. Teixeira, A.F. da Cunha, J.P. Leitão, P.M.P. Salomé, P.A. Fernandes, T. Törndahl, T. Prokscha, A. Suter, Z. Salman, Phys. Rev. Mater. 2, 025402 (2018)
J.P. Perdew, K. Burke, M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996)
J. Heyd, G.E. Scuseria, J. Chem. Phys. 121, 1187 (2004)
J. Paier, M. Marsman, K. Hummer, G. Kresse, I.C. Gerber, J.G. Angyan, J. Chem. Phys. 124, 154709 (2006)
M. Marsman, J. Paier, A. Stroppa, G. Kresse, J. Phys. Condens. Matter 20, 064201 (2008)
J. Pohl, K. Albe, Phys. Rev. B 87, 245203 (2013)
J. Bekaert, R. Saniz, B. Partoens, D. Lamoen, Phys. Chem. Chem. Phys. 16, 22299 (2014)
P. Hohenberg, W. Kohn, Phys. Rev. 136, B864 (1964)
W. Kohn, L.J. Sham, Phys. Rev. 140, A1133 (1965)
G. Kresse, J. Hafner, Phys. Rev. B 47, 558 (1993)
G. Kresse, J. Hafner, Phys. Rev. B 49, 14251 (1994)
G. Kresse, J. Furthmüller, Phys. Rev. B 54, 11169 (1996)
G. Kresse, D. Joubert, Phys. Rev. B 59, 1758 (1999)
P.E. Blöchl, Phys. Rev. B 50, 17953 (1994)
K. Momma, F. Izumi, J. Appl. Crystallogr. 44, 1272–1276 (2011)
J.E. Jaffe, A. Zunger, Phys. Rev. B 64, 241304(R) (2001)
Y. Hinuma, F. Oba, Y. Kumagai, I. Tanaka, Phys. Rev. B 88, 035305 (2013)
Y. Hinuma, F. Oba, Y. Kumagai, I. Tanaka, Phys. Rev. B 86, 245433 (2012)
P.E. Blöchl, O. Jepsen, O.K. Andersen, Phys. Rev. B 49, 16223–16233 (1994)
J.B. Varley, V. Lordi, X. He, A. Rockett, J. Appl. Phys. 119, 025703 (2016)
H.W. Spiess, U. Haeberlen, G. Brandt, A. Räuber, J. Schneider, Phys. Stat. Sol. (b) 62, 183–192 (1974)
R.J. Traill, R.W. Boyle, Am. Mineral. 40, 555–559 (1955)
A.P. Sutton, R.W. Balluffi, Interfaces in Crystalline Materials (Clarendon, Oxford, 1995)
A.G. Marinopoulos, R.C. Vilão, H.V. Alberto, E.F.M. Ribeiro, J.M. Gil, P.W. Mengyan, M.R. Goeks, M. Kauk-Kuusik, J.S. Lord, Philos. Mag. 101, 2412–2434 (2021). https://doi.org/10.1080/14786435.2021.1972178
Acknowledgements
The present work was supported with funds from FEDER (Programa Operacional Factores de Competitividade COMPETE) and from FCT-Fundação para a Ciência e Tecnologia (Portugal) under UID/FIS/04564/2016 and PTDC/FIS-MAC/29696/2017. The computing facilities of the Department of Physics of the University of Coimbra were used, including the Navigator cluster at the Laboratory for Advanced Computing.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Marinopoulos, A.G. Interaction of hydrogen impurities with intrinsic point defects at the CuInSe\(_2\)/CdS interface of chalcopyrite-based solar cells. Eur. Phys. J. B 95, 5 (2022). https://doi.org/10.1140/epjb/s10051-021-00255-z
Received:
Accepted:
Published:
DOI: https://doi.org/10.1140/epjb/s10051-021-00255-z