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Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

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Abstract

Stress and strain distributions in and around a single or two-coupled pyramidal InAs quantum dots (QDs) embedded in GaAs are calculated by finite element methods according to the continuum elasticity theory. By changing the quantum dot spacing and thickness of cap layer, the results about strain and stress distributions show compressive strain and stress distribution in the QDs and relaxation undergoes two stages with different speeds for different quantum dot height, quantum width and thickness of cap layer. The stress and strain distributions of pyramidal QDs would not vary monotonously with geometric dimensions. The height of quantum dot and cap layer thickness can effectively adjust the vertical correlation of self-assembly QDs according to the calculation. The shape of stress distribution at surface of cap layer can be tuned from a quadrangle into a circle by increasing the thickness of cap layer or decreasing the height of quantum dot. Also, a new approach to grow quantum ring is found in this paper. The calculations of two-coupled QDs show that the self-assembly technology might fail if the horizontal distance between two QDs is not large enough. The stress induced by upper QDs will be relaxed to zero with a longer distance downwards is found in this paper.

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Authors and Affiliations

  1. College of Big Data and Information Engineering, Guizhou University, Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang, 550025, P.R. China

    XueFei Liu, ZiJiang Luo, JieMin Wei, Yi Wang, Xiang Guo, QiZhi Lang & Zhao Ding

  2. Semiconductor Power Device Reliability Engineering Center of Ministry of Education, Guiyang, 550025, P.R. China

    XueFei Liu, ZiJiang Luo, JieMin Wei, Yi Wang, Xiang Guo, QiZhi Lang & Zhao Ding

  3. College of Physics and Electronic Science, Guizhou Normal University, Guiyang, 550025, P.R. China

    XueFei Liu & Xun Zhou

  4. College of Information, Guizhou University of Finance and Economics, Guiyang, 550025, P.R. China

    ZiJiang Luo

  5. Guizhou Institute of Technology, Guiyang, 550002, P.R. China

    JieMin Wei

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  1. XueFei Liu
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  2. ZiJiang Luo
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  3. Xun Zhou
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  6. Xiang Guo
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  7. QiZhi Lang
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  8. Zhao Ding
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Correspondence to Zhao Ding.

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Liu, X., Luo, Z., Zhou, X. et al. Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method. Eur. Phys. J. B 92, 138 (2019). https://doi.org/10.1140/epjb/e2019-100090-5

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  • DOI: https://doi.org/10.1140/epjb/e2019-100090-5

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