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Electric field-induced rearrangement of charged species in metal oxide devices with resistive change: thermodynamic limitations

  • Solid State and Materials
  • Regular Article
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Abstract

Hypotheses used to interpret results of electrical measurements on metal oxides which are employed for gas sensors and resistive switching memristors are often based on consideration of drift migration of species (such as oxygen vacancies, chemisorbed ions) under electric field. We offer simple conceptual arguments restricting this approach from the view points of potential minimum principle, ambipolar diffusion and non-equilibrium thermodynamics (Glansdorff-Prigogine criterion).

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Authors and Affiliations

  1. Karlsruhe Institute of Technology, Institute of Microstructure Technology, IMT, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany

    I. Kiselev & M. Sommer

  2. Physics Department, Saratov State Technical University, Polytechnicheskaya 77, 410054, Saratov, Russia

    V. V. Sysoev

Authors
  1. I. Kiselev
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  2. M. Sommer
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  3. V. V. Sysoev
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Correspondence to I. Kiselev.

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Kiselev, I., Sommer, M. & Sysoev, V.V. Electric field-induced rearrangement of charged species in metal oxide devices with resistive change: thermodynamic limitations. Eur. Phys. J. B 82, 7–12 (2011). https://doi.org/10.1140/epjb/e2011-20176-0

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  • DOI: https://doi.org/10.1140/epjb/e2011-20176-0

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