Abstract
We investigate localization behavior of electron states in bilayer graphene formed with the Bernal stacking in the presence of various types of disorder (site-energy, in-plane hopping and inter-plane hopping) by the use of the transfer matrix method. It is found that all the states are localized at various kinds of disorder (site-energy, in-plane hopping and inter-plane hopping) except that in the case of inter-plane-hopping disorder the states at the zero energy are critical. The implications of the results are discussed.
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Wang, YX., Xiong, SJ. Disorder and localization of electrons in bilayer graphene. Eur. Phys. J. B 67, 63–69 (2009). https://doi.org/10.1140/epjb/e2009-00011-1
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DOI: https://doi.org/10.1140/epjb/e2009-00011-1