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First principle study of structural, electronic and magnetic properties of silicon doped zigzag boron nitride nanoribbon

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Abstract

Using first principle calculation, we investigate the structural, electronic and magnetic properties of silicon doped zigzag boron nitride nanoribbon (ZBNNR). Our results show that the shift in position of silicon doping with respect to the ribbon edge causes change in the structural geometry, electronic structure and magnetization of ZBNNR. The band gap of silicon doped ZBNNR is found to become narrower as compared to that of perfect ZBNNR. We find that band gap and magnetic moment of ZBNNR can be tuned by substitutional silicon doping position and doping concentration.

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Authors and Affiliations

  1. Department of Physics, Kamla Nehru Institute of Physical and Social Sciences, Sultanpur, 228118, India

    Amar Bahadur

  2. Department of Applied Physics, SSGI, Shri Shankaracharya Technical Campus, Junwani, 490020, India

    Mohan L. Verma

  3. Department of Physics, Birla Institute of Technology and Science, Pilani, 333031, India

    Madhukar Mishra

Authors
  1. Amar Bahadur
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  2. Mohan L. Verma
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  3. Madhukar Mishra
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Correspondence to Amar Bahadur.

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Bahadur, A., Verma, M.L. & Mishra, M. First principle study of structural, electronic and magnetic properties of silicon doped zigzag boron nitride nanoribbon. Eur. Phys. J. B 88, 79 (2015). https://doi.org/10.1140/epjb/e2015-50847-5

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  • DOI: https://doi.org/10.1140/epjb/e2015-50847-5

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