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Injection modification of multilayer dielectric layers of metal-oxide-semiconductor structures at different temperatures

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Inorganic Materials: Applied Research Aims and scope

Abstract

The charge state change of MOS structures with multilayer dielectric films SiO2-PSG under high-field injection modification at different temperatures is studied in this article. The effect of temperature on the thermal stability of the negative charge component used to adjust the threshold voltage of MOS transistors is investigated. It is found that the performance of the high-field injection modification of MOS structures in the mode of constant current at elevated temperatures increases not only the density of the trapped negative charge but also its thermally stable component.

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References

  1. Andreev, V.V., Bondarenko, G.G., Stolyarov, A.A., Vasyutin, M.S., and Korotkov, S.I., Effect of temperature on injection modification of dielectric films of MIS-structures, Perspekt. Mater., 2008, no. 5, pp. 26–30.

    Google Scholar 

  2. Andreev, V.V., Bondarenko, G.G., Stolyarov, A.A., Vasyutin, M.S., and Mikhal’kov, A.M., Study of effects of injection modification regimes on charge state of gate dielectric of MIS devices, Perspekt. Mater., 2009, no. 2, pp. 19–24.

    Google Scholar 

  3. Bondarenko, G.G., Andreev, V.V., Maslovsky, V.M., Stolyarov, A.A., and Drach, V.E., Plasma and injection modification of gate dielectric in MOS structures, Thin Solid Films, 2003, vol. 427, pp. 377–380.

    Article  CAS  Google Scholar 

  4. Levin, M.N., Gitlin, V.R., Tatarintsev, A.V., Ostroukhov, S.S., and Kadmenskii, S.G., X-ray and UV adjustment of threshold voltage in MOS-circuit manufacture, Russ. Microelectr., 2002, vol. 31, pp. 346–350.

    Article  Google Scholar 

  5. Andreev, V.V., Baryshev, V.G., Bondarenko, G.G., Stolyarov, A.A., and Shakhnov, V.A., Charge degradation of MIS structures with thermal silicon oxide passivated by phosphosilicate glass at high-field tunnel injection, Russ. Microelectr., 1997, vol. 26, pp. 378–383.

    CAS  Google Scholar 

  6. Bondarenko, G.G., Andreev, V.V., Drach, V.E., Loskutov, S.A., and Stolyarov, M.A., Study of temperature dependence of positive charge generation in thin dielectric film of MOS structure under high-fields, Thin Solid Films, 2006, vol. 515, pp. 670–673.

    Article  CAS  Google Scholar 

  7. Soldatov, V.S., Sobolev, N.V., Varlashov, I.B., Kolyada, V.A., and Voevodin, A.G., Electron capture in MIS structures with thermal silicon dioxide under tunnel injection, Izv. Vyssh. Uchebn. Zaved., Fiz., 1989, No. 12, pp. 82–84.

    Google Scholar 

  8. Andreev, V.V., Bondarenko, G.G., Maslovsky, V.M., and Stolyarov, A.A., Multilevel current stress technique for investigation thin oxide layers of MOS structures, IOP Conf. Series: Mater. Sci. Eng., 2012, vol. 41, p. 012017.

    CAS  Google Scholar 

  9. Baryshev, V.G., Stolyarov, A.A., and Andreev, V.V., Study of peculiarities of accumulation and lamination of negative charge in thin-film dielectric, Elektron. Tekhn. Ser. 6. Materialy, 1986, no. 4, pp. 45–48.

    Google Scholar 

  10. Arnold, D., Cartier, E., and DiMaria, D.J., Theory of high-field electron transport and impact ionization in silicon dioxide, Phys. Rev. B: Condens. Matter, 1994, vol. 49, pp. 10278–10297.

    Article  CAS  Google Scholar 

  11. Lombardo, S., Stathis, J.H., Linder, P., Pey, K.L., Palumbo, F., and Tung, C.H., Dielectric breakdown mechanisms in gate oxides, J. Appl. Phys., 2005, vol. 98, p. 121301.

    Article  Google Scholar 

  12. Gritsenko, V.A., Tyschenko, I.E., Popov, V.P., and Perevalov, T.V., Dielektriki v nanoelektronike (Dielectrics in Nanoelectronics), Novosibirsk: Sibir. Otd. Ross. Akad. Nauk, 2010.

    Google Scholar 

  13. Bulusheva, M.A., Popov, V.D., Protopopov, G.A., and Skorodumova, A.V., Physical model of MOS structure aging, Semiconductors, 2010, vol. 44, pp. 508–513.

    Article  CAS  Google Scholar 

  14. Afanas’ev V.V., Stesmans, A., Internal photoemission at interfaces of high-k insulators with semiconductors and metals, J. Appl. Phys., 2007, vol. 102, p. 081301.

    Article  Google Scholar 

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Authors and Affiliations

  1. Bauman Moscow State Technical University, Kaluga Branch, ul. Bazhenova 2, Kaluga, 248000, Russia

    V. V. Andreev, A. A. Stolyarov & S. I. Korotkov

  2. Moscow Institute of Electronics and Mathematics of National Research University Higher School of Economics, Bolshoi Trekhsvyatitel’skii per. 3, Moscow, 109028, Russia

    G. G. Bondarenko

Authors
  1. V. V. Andreev
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  2. G. G. Bondarenko
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  3. A. A. Stolyarov
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  4. S. I. Korotkov
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Correspondence to V. V. Andreev.

Additional information

Original Russian Text © V.V. Andreev, G.G. Bondarenko, A.A. Stolyarov, S.I. Korotkov, 2013, published in Perspektivnye Materialy, 2013, No. 7, pp. 31–36.

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Andreev, V.V., Bondarenko, G.G., Stolyarov, A.A. et al. Injection modification of multilayer dielectric layers of metal-oxide-semiconductor structures at different temperatures. Inorg. Mater. Appl. Res. 5, 129–132 (2014). https://doi.org/10.1134/S2075113314020038

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  • DOI: https://doi.org/10.1134/S2075113314020038

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