Abstract
The role of the environment on the dynamics of the photoburning processes of the red–infrared photoluminescence (PL) of hybrid silicon nanoparticles (npSi/SiOx) under the influence of continuous laser radiation (410 and 635 nm) in different media (in a helium or oxygen atmosphere at low pressures, in carbon tetrachloride solutions, in polymer matrices, and in vacuum) is studied. It is established that the presence of electron-acceptor molecules or compounds in the components of the medium increases the rate of luminescence photoburning (photosensitivity) of npSi/SiOx. The lowest photosensitivity is observed when the nanoparticles are in vacuum or in a helium atmosphere. It is shown that the photoburning rate depends on the wavelength of the exciting radiation. A mechanism of photosensitivity of npSi/SiOx is proposed which is based on recharging the centers involved in the photoluminescence process and located in the oxide shell or at the core–shell interface.
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Original Russian Text © A.O. Rybaltovskii, Yu.S. Zavorotnyi, A.A. Ishchenko, A.E. Parshutkin, V.A. Radtsig, A.P. Sviridov, E.D. Feklichev, V.N. Bagratashvili, 2018, published in Rossiiskie Nanotekhnologii, 2018, Vol. 13, Nos. 3–4.
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Rybaltovskii, A.O., Zavorotnyi, Y.S., Ishchenko, A.A. et al. Effect of Electron-Acceptor Compounds on the Laser Burning of Photoluminescence of Hybrid Si/SiOx Silicon Nanoparticles. Nanotechnol Russia 13, 141–151 (2018). https://doi.org/10.1134/S199507801802009X
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DOI: https://doi.org/10.1134/S199507801802009X