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Measurement of local thickness of oxide layer and its electronic characteristics by scanning tunneling microscopy

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Abstract

A method for determining local thicknesses and parameters of the electronic structure of thin oxide films, as well as of absolute values of the distance between the tip of the scanning tunneling microscope and the surface of the sample under study, are presented in this work.

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Authors and Affiliations

  1. Federal State Budget Institution of Science, Semenov Institute of Chemical Physics, Russian Academy of Sciences, ul. Kosygina 4, Moscow, 119991, Russia

    A. K. Gatin, M. V. Grishin, A. A. Kirsankin, M. A. Kozhushner, V. S. Posvyanskii, V. A. Kharitonov & B. R. Shub

Authors
  1. A. K. Gatin
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  2. M. V. Grishin
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  3. A. A. Kirsankin
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  4. M. A. Kozhushner
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  5. V. S. Posvyanskii
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  6. V. A. Kharitonov
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  7. B. R. Shub
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Correspondence to A. K. Gatin.

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Original Russian Text © A.K. Gatin, M.V. Grishin, A.A. Kirsankin, M.A. Kozhushner, V.S. Posvyanskii, V.A. Kharitonov, B.R. Shub, 2013, published in Rossiiskie Nanotekhnologii, 2013, Vol. 8, Nos. 9–10.

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Gatin, A.K., Grishin, M.V., Kirsankin, A.A. et al. Measurement of local thickness of oxide layer and its electronic characteristics by scanning tunneling microscopy. Nanotechnol Russia 8, 627–630 (2013). https://doi.org/10.1134/S1995078013050030

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  • DOI: https://doi.org/10.1134/S1995078013050030

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