Abstract
Using the polarized neutron reflectometry method, we studied Au/SiO2 + Co(60 at %)/GaAs granular films, which display a giant injection magnetoresistance effect in a narrow temperature range close to T = 300 K. We revealed the existence of a layer having particular magnetic properties at the boundary of a film with a semiconductor GaAs substrate. Experiments carried out at temperatures T = 300 K and T = 100 K showed an insignificant difference in the magnetic profile of the heterostructure.
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L. V. Lutsev, J. Phys.: Condens. Matter. 18, 1 (2006).
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Original Russian Text © V.A. Ukleev, N.A. Grigorieva, A.A. Vorobiev, S.V. Grigoriev, L.V. Lutsev, E.A. Dyadkina, D. Lott, A.I. Stognii, N.N. Novitsky, 2011, published in Pis’ma v Zhurnal Fizika Elementarnykh Chastits i Atomnogo Yadra, A: Tyazholye Iony (Heavy Ions).
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Ukleev, V.A., Grigorieva, N.A., Vorobiev, A.A. et al. Study of the Au/SiO2 + Co(65 at %)/GaAs heterostructure interfaces by the polarized neutron reflectometry method. Phys. Part. Nuclei Lett. 8, 1054–1055 (2011). https://doi.org/10.1134/S1547477111100189
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DOI: https://doi.org/10.1134/S1547477111100189