Abstract
Transmission Electron Microscopy (TEM) and Rutherford Backscattering (RBS) have been used to observe the spatially isolated disordered zones in InP resulting from 100 keV Au ion irradiation at room temperature. Studies were carried out in interval of irradiation fluences less than lower value of full amorphization fluence. Such a value of fluence, as was established in the studies, can be estimated of order ∼2.5 × 1013cm−2. The accumulation of damage due to the 100 keV Au ion irradiation was described in this material using a composite theoretical model accounting for both homogeneous and heterogeneous amorphization processes.
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References
I. Jencic, E. P. Hollar, and I. M. Robertson, “Crystallization of Isolated Amorphous Zones in Semiconductors,” Philos. Mag. 83, 2557–2571 (2003).
T. D. de la Rubia, “Irradiation-Induced Defect Production in Elemental Metals and Semiconductors: A Review of Recent Molecular Dynamics Studies,” Ann. Rev. Mater. Sci. 26, 613–649 (1996).
J. R. Parsons, R. W. Balluffi, and J. S. Koehler, “Direct Observation of Neutron Damage in Germanium,” Appl. Phys. Lett. 1, 57 (1962).
L. M. Howe and M. H. Rainville, “Heavy Ion Damage in Silicon and Germanium,” Nucl. Instrum. Methods Phys. Res. B 19–20, 61 (1987).
J. Narayan et al., “High-Resolution Imaging of Ion-Implantation Damage and Mechanism of Amorphization in Semiconductors,” Mater. Lett. 2(3), 211–218 (1984).
L. M. Howe and M. H. Rainville, “Features of Collision Cascades in Silicon as Determined by Transmission Electron Microscopy,” Nucl. Instrum. Methods Phys. Res. 182–183, 143 (1981).
M. O. Ruault et al., “High Resolution and In-situ Investigation of Defects in Bi-Irradiated Si,” Philos. Mag. A 50(5), 667–675 (1984).
A. Yu. Didyk and V. S. Varichenko, “Track Structure in Dielectric and Semiconductor Single Crystals Irradiated by Heavy Ions with High Level Inelastic Energy Losses,” Nucl. Track Rad. Meas. 25(1–4), 119–124 (1995).
H. Bernas, M. O. Ruault, and P. Zheng, “Multiple Amorphous States in Ion Implanted Semiconductors Si and InP,” in Cruc. Iss. Semicond. Mater. Proces. Techn., Ed. by S. Coffa (Kluwer Acad., 1992).
L. Chadderton, “Nucleation of Damage Centers during Ion Implantation of Silicon,” Rad. Eff. 8, 77–86 (1971).
T. J. Chandler and M. L. Jenkins, “The Structure of Displacement Cascades in III-V Semiconductors,” Microscopy of Semicond. Mater., Ser. 67 (Inst. Phys. Conf., London, 1983).
M. L. Jenkins et al., “In-situ Observations of the Development of Heavy-Ion Damage in Semiconductors,” Microscopy of Semicond. Mater., Ser. 79 (Inst. of Phys. Conf., London, 1985).
P. Zheng et al., “In-situ Defect Studies on Si Implanted InP,” J. Phys. D 23, 877–883 (1990).
M. O. Ruault, J. Chaumont, and H. Bernas, “Transmission Electron Microscopy Study of Ion Implantation Induced Si Amorphization,” Nucl. Instrum. Methods Phys. Res. 209–210, 351–356 (1983).
I. Jencic and I. M. Robertson, “Low-Energy Electron Beam Induced Regrowth of Isolated Amorphous Zones in Si and Ge,” J. Mater. Res. 11(9), 2152–2157 (1996).
I. Jencic, E. P. Hollar, and I. M. Robertson, “Electron-Induced Regrowth of Isolated Amorphous Zones in GaAs,” Nucl. Instrum. Methods Phys. Res. B 175, 197–201 (2001).
I. M. Robertson and I. Jencic, “Regrowth of Amorphous Regions in Semiconductors by Sub-Threshold Electron Beams,” J. Nucl. Mater. 239(1–3), 273–278 (1996).
M. W. Bench et al., “Production of Amorphous Zones in GaAs by the Direct Impact of Energetic Heavy Ions,” J. Appl. Phys. 87(1), 49–56 (2000).
I. Jencic et al., “Computer Image Analysis of Shrinkage of Isolated Amorphous Zones in Semiconductors Induced by Electron Beam,” Nucl. Instrum. Methods Phys. Res. B 186, 126–131 (2002).
I. Jencic and I. M. Robertson, “Regrowth of Heavy-Ion Implantation Damage by Electron Beams,” Mater. Sci. Semicond. Proces. 3(4), 311–315 (2000).
I. Jencic, I. M. Robertson, and J. Skvarc, “Electron Beam Induced Regrowth of Ion Implantation Damage in Si and Ge,” Nucl. Instrum. Methods Phys. Res. B 148(1–4), 345–349 (1999).
I. Jencic et al., “Electron-Beam-Induced Crystallization of Isolated Amorphous Regions in Si, Ge, GaP and GaAs,” J. Appl. Phys. 78(2), 974–982 (1995).
M. L. Jenkins and M. A. Kirk, “Characterization of Radiation Damage by Transmission Electron Microscopy,” Ser. Microsc. Mater. Sci. (Inst. of Phys., London, 2001).
M. W. Bench, D. K. Tappin, and I. M. Robertson, “On the Suitability of the Down-Zone Imaging Technique to the Study of Radiation Damage,” Philos. Mag. Lett. 66(1), 39–45 (1992).
AnalySIS®, Soft Imaging System, http://www.softimaging.net.
J. F. Gibbons, “Ion Implantation in Semiconductors: II. Damage Production and Annealing,” Proc. Inst. Electr. Electron. Eng. 60(9), 1062–1096 (1972).
W. J. Weber, “Models and Mechanisms of Irradiation-Induced Amorphization in Ceramics,” Nucl. Instrum. Methods Phys. Res. B 166–167, 98–106 (2000).
N. Hecking, K. F. Heidemann, and E. T. Kaat, “Model of Temperature Dependent Defect Interaction and Amorphization in Crystalline Silicon during Ion Irradiation,” Nucl. Instrum. Methods Phys. Res. B 15, 760–764 (1986).
J. Nord, K. Nordlund, and J. Keinonen, “Amorphization Mechanism and Defect Structures in Ion-Beam-Amorphized Si, Ge, and GaAs,” Phys. Rev. B 65, 165329 (2002).
C. Cohen et al., “Transformation to Amorphous State of Metals by Ion Implantation: P in Ni,” Phys. Rev. B 31, 5–14 (1985).
E. Bezakova et al., “Implantation-Induced Amorphization of InP Characterized with Perturbed Angular Correlation,” Appl. Phys. Lett. 75(13), 1923–1925 (1999).
P. Zheng et al., “Temperature Influence on the Damage Induced Si Implanted InP,” J. Appl. Phys. 70(2), 752–757 (1991).
M. W. Bench, “Transmission Electron Microscopy Investigation of Ion Implantation Damage in GaAs and Other Semiconductors,” PhD Thesis (Univ. of Illinois at Urbana-Champaign, 1992).
S. O. Kucheyev, “Amorphous Zone Evolution in Si during Elevated Temperature Ion Bombardment,” Nucl. Instrum. Methods Phys. Res. B 174(1–2), 130–136 (2001).
E. Wendler et al., “Temperature and Dose Dependence of Damage Production in Si+ and Se+ Implanted InP,” Nucl. Instrum. Methods Phys. Res. B 106(1–4), 303–307 (1995).
E. Wendler, T. Opfermann, and P. I. Gaiduk, “Ion Mass and Temperature Dependence of Damage Production in Ion Implanted InP,” J. Appl. Phys. 82(12), 5965–5975 (1997).
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Khalil, A.S., Didyk, A.Y. RBS and TEM studies of indium phosphide irradiated with 100 keV Au ions. Phys. Part. Nuclei Lett. 6, 498–504 (2009). https://doi.org/10.1134/S1547477109060132
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DOI: https://doi.org/10.1134/S1547477109060132