Abstract
Tin atoms formed after the radioactive decay of the 119mmSn and 119Sb impurity atoms in the structure of Ge x S1 − x and Ge x Se1 − x glasses are stabilized in the form of Sn2+ and Sn4+ centers or in germanium nodes (after 119mmSn decay), or in the nodes of structural units formed by 119Sb atoms. The Sn2+ and Sn4+ centers correspond to the ionized states of amphoteric two-electron tin center with negative correlation energy. 119Sn atoms formed after the radioactive decay of the 119mTe atoms in the structure of Ge x S1 − x and Ge x Se1 − x glasses are stabilized in both chalcogen and germanium nodes.
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References
Anderson, P.W., Model for Electronic Structure of Amorphous Semiconductors, Phys. Rev. Lett., 1975, vol. 34, no. 15, pp. 953–955.
Elektronnye yavleniya v khal’kogenidnykh stekloobraznykh poluprovodnikakh (Electronic Phenomena in Chalcogenide Vitreous Semiconductors), Tsendin, K.D., Ed., St. Petersburg: Nauka, 1996.
Bordovsky, G., Marchenko, A., and Seregin, P., Mössbauer of Negative U-Centers in Semiconductors and Superconductors: Identification, Properties, and Application, Berlin: Lambert Academic, 2012.
Bordovskii, G.A., Castro, R.A., Seregin, P.P., and Dobrodub, A.A., Properties and Structure of the (As2Se3)1−x (SnSe)z-x(GeSe)x and (As2Se3)1−z (SnSe2) z − x (GeSe2)x Glasses, Glass Phys. Chem., 2006, vol. 32, no. 3, pp. 320–324.
Bordovskii, G.A., Castro, R.A., Marchenko, A.V., and Seregin, P.P., Thermal Stability of Tin Charge States in the Structure of the (As2Se3)0.4(SnSe)0.3(GeSe)0.3 Glasses, Glass Phys. Chem., 2007, vol. 33, no. 5, pp. 467–470.
Bordovskii, G.A., Castro, R.A., Marchenko, A.V., and Seregin, P.P., Radiation Stability of Tin Charge States in the (As2Se3)1 − z (SnSe)z − x(GeSe)x Glasses, Glass Phys. Chem., 2007, vol. 33, no. 5, pp. 471–474.
Bordovsky, G.A., Nemov, S.A., Marchenko, A.V., and Seregin, P.P., Mössbauer Studies of Two-Electron Centers with a Negative Correlation Energy in Crystalline and Amorphous Semiconductors, Semiconductors, 2012, vol. 46, no. 1, pp. 1–21.
Seregin, N.P., Seregin, P.P., Nemov, S.A., and Yanvareva, A.Y., Antistructural Defects in Lead Chalcogenides, J. Phys.: Condens. Matter, 2003, vol. 15, no. 44, pp. 7591–7597.
Bordovsky, G.A., Marchenko, A.V., Seregin, P.P., Ali, H.M., Gladkikh, P.V., and Kozhokar’, M.Yu., Two-Electron Tin Centers Formed in Chalcogenide Glasses as a Result of Nuclear Transformations, Glass Phys. Chem., 2010, vol. 36, no. 6, pp. 652–656.
Castro Arata, R.A, Primesnye i defektnye U-tsentry kak instrument issledovaniya khal’kogenidnykh stekloobraznykh poluprovodnikov (Impurity and Defect U-Centers as a Tool for Investigating Chalcogenide Structurally Disordered Semiconductors), St. Petersburg: Herzen State Pedagogical University of Russia, 2011, pp. 42–45.
Bordovskii, V.A., Marchenko, A.V., Nasredinov, F.S., Kozhokar’, M.Yu., and Seregin, P.P., Determination of the Quantitative Composition of the As-Se and Ge-Se Glasses and Films by X-Ray Fluorescence Analysis, Glass Phys. Chem., 2010, vol. 36, no. 4, pp. 406–410.
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Original Russian Text © G.A. Bordovskii, A.V. Marchenko, N.I. Anisimova, M.Yu. Kozhokar’, P.P. Seregin, 2013, published in Fizika i Khimiya Stekla.
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Bordovskii, G.A., Marchenko, A.V., Anisimova, N.I. et al. The state of tin impurity atoms in vitreous germanium chalcogenides. Glass Phys Chem 39, 45–51 (2013). https://doi.org/10.1134/S1087659613010021
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DOI: https://doi.org/10.1134/S1087659613010021