Skip to main content
SpringerLink
Log in

Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses

  • AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The formation of antisite defects in Ge20Te80 and Ge15As4Te81 vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by emission Mössbauer spectroscopy with the 119mmSn(119mSn), 119mTe(119mSn), 125Sn(125Te), and 125mTe(125Te) isotopes. It is shown that the isovalent substitution of germanium atoms by tin atoms does not vary the symmetry of the local surrounding of germanium sites, while tin and tellurium atoms reconstruct their local surrounding in sites unnatural for them.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.

Similar content being viewed by others

REFERENCES

  1. Z. Jiawei, L. Bolin, and C. Gang, Semicond. Sci. Technol. 31, 043001 (2016).

    Article  Google Scholar 

  2. H. Overhof and J.-M. Spaeth, Phys. Rev. B 72, 115205 (2005).

    Article  ADS  Google Scholar 

  3. N. P. Seregin, P. P. Seregin, S. A. Nemov, and A. Yu. Yanvareva, J. Phys.: Condens. Matter 15, 7591 (2003).

    ADS  Google Scholar 

  4. S. A. Nemov, P. P. Seregin, S. M. Irkaev, and N. P. Seregin, Semiconductors 37, 263 (2003).

    Article  ADS  Google Scholar 

  5. G. A. Bordovsky, P. V. Gladkikh, M. Yu. Kozhokar, A. V. Marchenko, P. P. Seregin, and E. I. Terukov, Semiconductors 44, 978 (2010).

    Article  ADS  Google Scholar 

  6. G. A. Bordovsky, S. A. Nemov, A. V. Marchenko, A. V. Zaitceva, M. Yu. Kozhokar, and P. P. Seregin, Semiconductors 45, 427 (2011).

    Article  ADS  Google Scholar 

  7. G. A. Bordovsky, A. Yu. Dashina, A. V. Marchenko, P. P. Seregin, and E. I. Terukov, Semiconductors 45, 783 (2011).

    Article  ADS  Google Scholar 

  8. G. A. Bordovskii, M. Yu. Kozhokar’, A. V. Marchenko, A. S. Naletko, and P. P. Seregin, Phys. Solid State 54, 1353 (2012).

    Article  ADS  Google Scholar 

  9. A. V. Marchenko, E. I. Terukov, P. P. Seregin, A. N. Rasnjuk, and V. S. Kiselev, Semiconductors 50, 876 (2016).

    Article  ADS  Google Scholar 

  10. A. V. Marchenko and P. Seregin, Mössbauer Emission Spectroscopy. Impurities and Radiation Defects in Semiconductors (Palmarium Academic, Saarbrücken, 2014).

    Google Scholar 

  11. F. Betts, A. Bienenstock, and S. R. Ovshinsky, Non-Cryst. Sol. 4, 554 (1970).

    Google Scholar 

  12. S. Kim and P. Boolchand, Phys. Rev. B 19, 3187 (1979).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Herzen State Pedagogical University of Russia, 191186, St. Petersburg, Russia

    A. V. Marchenko, P. P. Seregin & K. B. Shakhovich

  2. Saint Petersburg Electrotechnical University LETI, 197376, St. Petersburg, Russia

    E. I. Terukov

Authors
  1. A. V. Marchenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P. P. Seregin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. E. I. Terukov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. K. B. Shakhovich
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to P. P. Seregin.

Additional information

Translated by N. Korovin

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Marchenko, A.V., Seregin, P.P., Terukov, E.I. et al. Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses. Semiconductors 53, 711–716 (2019). https://doi.org/10.1134/S1063782619050166

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782619050166

Search

Navigation