Abstract
The specific features of the processes of charge transfer and accumulation in thin films of arsenic triselenide As2Se3 are investigated by measuring the isothermal relaxation of dark electric currents. It is established that the relaxation properties of the films substantially depend on the method used for their preparation, which, apparently, can be associated with the structural features of this class of materials. Moreover, it is confirmed that the relaxation of the electric current in the films of chalcogenide glasses under investigation occurs through a non-Debye mechanism, irrespective of the preparation technique.
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Original Russian Text © V.A. Bordovskii, R.A. Kastro, G.I. Grabko, T.V. Taturevich, 2006, published in Fizika i Khimiya Stekla.
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Bordovskii, V.A., Kastro, R.A., Grabko, G.I. et al. Specific features of the relaxation processes in As2Se3 films prepared by different methods. Glass Phys Chem 32, 178–180 (2006). https://doi.org/10.1134/S108765960602009X
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DOI: https://doi.org/10.1134/S108765960602009X