Abstract
Specific features of remote plasma chemical etching of photoresist layers based on diazonaphthoquinones in oxygen at reduced pressure was studied. The possibility of performing “soft” etching at rates of 4–10 nm min–1 to obtain a photoresist layer surface with the root-mean-square roughness no higher than 0.2 nm was demonstrated.
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Original Russian Text © A.B. Speshilova, Yu.V. Solov’ev, S.E. Alexandrov, 2016, published in Zhurnal Prikladnoi Khimii, 2016, Vol. 89, No. 8, pp. 1071−1076.
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Speshilova, A.B., Solov’ev, Y.V. & Alexandrov, S.E. Plasma chemical etching of photoresist layers based on diazonaphthoquinones in an installation with remote oxygen plasma. Russ J Appl Chem 89, 1317–1321 (2016). https://doi.org/10.1134/S1070427216080164
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DOI: https://doi.org/10.1134/S1070427216080164