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Study of a subfluoride process for production of high-purity silicon

  • Inorganic Synthesis and Industrial Inorganic Chemistry
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Abstract

Process was studied in which high-purity silicon (1.07–1.35 ppm) is obtained from powdered technical-grade silicon (99.81–99.86% Si) produced by acid refining to remove impurities by its treatment with gaseous SiF4 at a temperature of 1200°C to give pure SiF2 (gas), with its subsequent decomposition at temperatures lower than 800°C into silicon and SiF4 (gas) circulating in the system.

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References

  1. Nemchinova, N.V., Izv. Vyssh. Uchebn. Zaved., Tsv. Metall., 2006, no. 1, pp. 4–8.

  2. US Patent 4138509.

  3. Vodop’yanov, A.G. and Kozhevnikov, G.N., Tsv. Met., 1998, nos. 10–11, pp. 86–89.

  4. RF Patent 2097320.

  5. RF Patent 2010110920.

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Authors and Affiliations

  1. Institute of Metallurgy, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia

    A. G. Vodop’yanov & G. N. Kozhevnikov

  2. Kyshtym Mining and Processing Combine, Open Joint-Stock Company, Kyshtym, Chelyabinsk oblast, Russia

    V. G. Kuz’min

Authors
  1. A. G. Vodop’yanov
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  2. G. N. Kozhevnikov
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  3. V. G. Kuz’min
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Additional information

Original Russian Text © A.G. Vodop’yanov, G.N. Kozhevnikov, V.G. Kuz’min, 2012, published in Zhurnal Prikladnoi Khimii, 2012, Vol. 85, No. 1, pp. 14–18.

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Vodop’yanov, A.G., Kozhevnikov, G.N. & Kuz’min, V.G. Study of a subfluoride process for production of high-purity silicon. Russ J Appl Chem 85, 12–15 (2012). https://doi.org/10.1134/S1070427212010028

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  • DOI: https://doi.org/10.1134/S1070427212010028

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