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Electronic structure and features of interatomic interactions in methoxysilanes H n Si(OCH3)4–n

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Abstract

The electronic structure and features of interatomic interactions in a series of methoxysilanes H n Si(OCH3)4–n (n = 3–0) were studied via density functional theory-based computer simulation and comparison of the simulated results with the photoelectron spectroscopic data. Calculations for the Si(OH)4, SiH4, H2O, and CH4 molecules were also performed in order to establish the laws governing the electronic structure formation of methoxysilanes. The distributions of the densities of electron states in the valence band and the correlation energy diagrams, supplemented by visualization of the molecular orbitals of the compounds, were constructed.

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Authors and Affiliations

  1. Research Institute of Physics, Southern Federal University, pr. Stachki 194, Rostov-on-Don, 344090, Russia

    M. M. Tatevosyan, T. N. Danilenko & V. G. Vlasenko

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  1. M. M. Tatevosyan
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  2. T. N. Danilenko
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  3. V. G. Vlasenko
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Correspondence to M. M. Tatevosyan.

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Original Russian Text © M.M. Tatevosyan, T.N. Danilenko, V.G. Vlasenko, 2016, published in Zhurnal Obshchei Khimii, 2016, Vol. 86, No. 9, pp. 1438–1446.

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Tatevosyan, M.M., Danilenko, T.N. & Vlasenko, V.G. Electronic structure and features of interatomic interactions in methoxysilanes H n Si(OCH3)4–n . Russ J Gen Chem 86, 2008–2015 (2016). https://doi.org/10.1134/S107036321609005X

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