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Metal oxide semiconductor sensors for determination of reactive gas impurities in air

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Abstract

Characteristics of metal oxide semiconductor sensors intended for measuring O3, NO x , Cl2, C1O2, and HCl microconcentrations were discussed. Specific features of detection of these microimpurities with semiconductor sensors were determined. The size of signal generated by sensors with WO3-, ZnO-, and In2O3-based sensing layers was examined in relation to the O3, NO x , Cl2, C1O2, and HCl concentration. The sensitivities exhibited by the semiconductor sensors with respect to target impurities make them suitable for measuring their maximum permissible concentrations in sanitary zones and for monitoring background ozone level in atmosphere. Examples of application of gas analyzers based on semiconductor sensors in determination of gas impurities in the open atmosphere were given.

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  1. Karpov Institute of Physical Chemistry, Vorontsovo pole 10, Moscow, 105064, Russia

    L. A. Obvintseva

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  1. L. A. Obvintseva
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Correspondence to L. A. Obvintseva.

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Original Russian Text © L.A. Obvintseva, 2008, published in Rossiiskii Khimicheskii Zhurnal, 2008, Vol. 52, No. 2, pp. 113–121.

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Obvintseva, L.A. Metal oxide semiconductor sensors for determination of reactive gas impurities in air. Russ J Gen Chem 78, 2545–2555 (2008). https://doi.org/10.1134/S1070363208120347

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