Abstract
High-resolution IR spectroscopic study has shown that stepwise heating of samples of silicon oxides in the temperature range from 50 to 1000°C is accompanied by accumulation of electronically excited states in the skeletal Si-O bond system, as well as by formation of associates in the cationic and anionic sublattices. Stationary association process and cooperative interaction of the excited states give rise to IR luminescence and diamagnetic response which increases as the temperature rises. Accumulation of the excited states in the chemical structure and their relaxation, including that occurring due to thermal desorption of singlet oxygen, are characterized by nonmonotonic temperature dependence of the heat capacity.
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Original Russian Text © V.B. Kopylov, K.A. Aleksandrov, E.V. Sergeev, 2008, published in Zhurnal Obshchei Khimii, 2008, Vol. 78, No. 5, pp. 726–733.
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Kopylov, V.B., Aleksandrov, K.A. & Sergeev, E.V. Thermal evolution of the chemical structure and properties of silicon oxides. Russ J Gen Chem 78, 868–875 (2008). https://doi.org/10.1134/S1070363208050058
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DOI: https://doi.org/10.1134/S1070363208050058