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2D Structures Based Field-Effect Transistors (Review)

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Abstract

We review the design and main parameters of field-effect transistors based on 2D structures of transition metal di- and trichalcogenides MoS2, MoSe2, MoTe2, WS2, WSe2, Mo1 ‒ xWxSe2, ZrS2, ZrSe2, HfS2, HfSe2, PtS2, PtSe2, PtTe2, PdSe2, ReS2, ReSe2, HfS3, ZrS3, TiS3, TaSe3, and NbS3, as well as monoatomic phosphorene (2DbP), antimonene (2DSb), arsenene (2DAs), silicene (2DSi), germanene (2DGe), and stanene (2DSn). Field-effect nanotransistors on flexible substrates, tunnel, and single-electron transistors based on van der Waals structures of graphene quantum dots, as well as transistors containing 2D heteropairs Gr‒(h)BN, Gr‒WS2, Gr‒(h)BC2N, Gr‒FGr, SnS2‒WS2, SnSe2‒WSe2, HfS2‒MoS2, PdSe2‒MoS2, and WSe2‒WO3 – x are discussed.

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Funding

This work was supported by the Russian Foundation for Basic Research, project no. 18-29-20080.

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Authors and Affiliations

  1. Enterprise “RD&P Center “Orion”, Russian Federation State Research Center, 111538, Moscow, Russia

    V. P. Ponomarenko & V. S. Popov

  2. Moscow Institute of Physics and Technology (National Research University), 141701, Dolgoprudny, Moscow oblast, Russia

    V. P. Ponomarenko & V. S. Popov

  3. Shvabe Holding, 129366, Moscow, Russia

    S. V. Popov

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Translated by E. Bondareva

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Ponomarenko, V.P., Popov, V.S. & Popov, S.V. 2D Structures Based Field-Effect Transistors (Review). J. Commun. Technol. Electron. 67, 1134–1151 (2022). https://doi.org/10.1134/S1064226922090121

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